A method for accurate temperature measurement using infrared thermal camera

2012 ◽  
Vol 61 (4) ◽  
pp. 223-227 ◽  
Author(s):  
T. Tokunaga ◽  
T. Narushima ◽  
T. Yonezawa ◽  
T. Sudo ◽  
S. Okubo ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Thermal Camera ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing

2008 ◽  
Vol 573-574 ◽  
pp. 35-43 ◽  
Author(s):  
Nicolaas Stolwijk ◽  
Ludmila Lerner ◽  
Axel Giese ◽  
Wilfried Lerch
Keyword(s):  
Temperature Measurement ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Isothermal Annealing ◽  
Diffusion Processes ◽  
Fast Diffusion ◽  
Scientific Impact ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

The study of fast diffusion processes in materials requires short isothermal annealing treatments combined with an accurate temperature measurement. The paper discusses the special demands on rapid thermal annealing (RTA) devices in diffusion research and how these can be met in practice. The scientific impact of RTA for diffusion research in semiconductors is demonstrated by several examples dealing with fast impurities in Ge and Si.

Accurate temperature measurement of a spectral beam combination grating based on VO2 film

2020 ◽  
Vol 59 (14) ◽  
pp. 4461
Author(s):  
Jiao Xu ◽  
Junming Chen ◽  
Dongping Zhang ◽  
Yonglu Wang ◽  
Yibin Zhang ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Beam Combination ◽  
Accurate Temperature ◽  
Accurate Temperature Measurement

3.3μm Pyrometry In Single Sided Rta From 400–700°C Using In-Situ Measurement Of Reflection And Transmission

1997 ◽  
Vol 470 ◽  
Author(s):  
D. L. Marcy ◽  
S. Chial ◽  
M. Beneš ◽  
J. C. Sturm
Keyword(s):  
Temperature Measurement ◽  
A Priori ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Reflection And Transmission ◽  
Accurate Temperature ◽  
Heavily Doped ◽  
Accurate Temperature Measurement ◽  
Initial Results

ABSTRACTPyrometry of silicon wafers under 700°C at wavelengths over 1μm is difficult because lightly doped wafers become partially transparent. In this work, a modified commercial RTCVD reactor with 8” wafer capability was used to study the temperature measurement of Si wafers over the range of 400–700°C using top and bottom pyrometric detectors. We present initial results on measurements of both reflection and transmission in-silu to determine emissivity at 3.3μm. For heavily doped wafers emissivity was independent of temperature and the measured temperature by pyrometry agreed well with that measured by thermocouple for 400–700°C. For lightly doped wafers, emissivity was temperature dependent due to the increased transparency of the wafer at low temperatures. Using fixed emissivity, the measured temperature severely underestimates the actual temperature below 550°C. By calculating emissivity from the measured reflection and transmission, accurate temperature measurement was achieved from 400–700°C without any a priori knowledge of the wafer.

Sign in / Sign up

Export Citation Format

Share Document