High‐Resolution Electron‐Impact Emission Spectrum of H 2 . I. Cross Sections and Emission Yields 900–1200 A

2000 ◽  
Vol 129 (1) ◽  
pp. 247-266 ◽  
Author(s):  
C. Jonin ◽  
Xianming Liu ◽  
J. M. Ajello ◽  
G. K. James ◽  
H. Abgrall
1995 ◽  
Vol 101 ◽  
pp. 375 ◽  
Author(s):  
Xianming Liu ◽  
Syed M. Ahmed ◽  
Rosalie A. Multari ◽  
Geoffrey K. James ◽  
Joseph M. Ajello

2000 ◽  
Vol 129 (1) ◽  
pp. 267-280 ◽  
Author(s):  
Xianming Liu ◽  
D. E. Shemansky ◽  
J. M. Ajello ◽  
D. L. Hansen ◽  
C. Jonin ◽  
...  

Author(s):  
Mihir Parikh

It is well known that the resolution of bio-molecules in a high resolution electron microscope depends not just on the physical resolving power of the instrument, but also on the stability of these molecules under the electron beam. Experimentally, the damage to the bio-molecules is commo ly monitored by the decrease in the intensity of the diffraction pattern, or more quantitatively by the decrease in the peaks of an energy loss spectrum. In the latter case the exposure, EC, to decrease the peak intensity from IO to I’O can be related to the molecular dissociation cross-section, σD, by EC = ℓn(IO /I’O) /ℓD. Qu ntitative data on damage cross-sections are just being reported, However, the microscopist needs to know the explicit dependence of damage on: (1) the molecular properties, (2) the density and characteristics of the molecular film and that of the support film, if any, (3) the temperature of the molecular film and (4) certain characteristics of the electron microscope used


1989 ◽  
Vol 159 ◽  
Author(s):  
A. Catana ◽  
M. Heintze ◽  
P.E. Schmid ◽  
P. Stadelmann

ABSTRACTHigh Resolution Electron Microscopy (HREM) was used to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. CoSi is found to grow epitaxially on Si with [111]Si // [111]CoSi and < 110 >Si // < 112 >CoSi. Two CoSi non-equivalent orientations (rotated by 180° around the substrate normal) can occur in this plane. They can be clearly distinguished by HRTEM on cross-sections ( electron beam along [110]Si). At about 500°C CoSi transforms to CoSi2. Experimental results show that the type B orientation relationship satisfying [110]Si // [112]CoSi is preserved after the initial stage of CoSi2 formation. At this stage an epitaxial CoSi/CoSi2/Si(111) system is obtained. The atomic scale investigation of the CoSi2/Si interface shows that a 7-fold coordination of the cobalt atoms is observed in both type A and type B epitaxies.


1974 ◽  
Vol 52 (21) ◽  
pp. 2076-2082 ◽  
Author(s):  
J. Wm. McGowan ◽  
J. F. Williams ◽  
W. Meckbach

The high resolution electron impact excitation of the H2 and D2 Lyman bands has been investigated. Particular attention has been paid to two series of (H2−2Σu+) resonances which decay into the B1Σu+(ν′) states.


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