Electron Impact Excitation Cross Sections for Complex Ions. III. Highly Charged Ions with Three Valence Electrons

1976 ◽  
Vol 209 ◽  
pp. 312 ◽  
Author(s):  
Allen D. Parks ◽  
Douglas H. Sampson
Keyword(s):  
Electron Impact ◽  
Cross Sections ◽  
Highly Charged Ions ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Complex Ions ◽  
Valence Electrons ◽  
Excitation Cross Sections ◽  
Charged Ions

Electron-impact excitation cross-section measurements at EBITs from 1986 to 2006

2008 ◽  
Vol 86 (1) ◽  
pp. 55-71 ◽  
Author(s):  
H Chen ◽  
P Beiersdorfer
Keyword(s):  
Electron Impact ◽  
Cross Section ◽  
Cross Sections ◽  
Ion Trap ◽  
Spectroscopic Properties ◽  
Highly Charged Ions ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Wide Range ◽  
Charged Ions

This paper reviews the electron-impact excitation (EIE) measurements at electron beam ion trap (EBIT) facilities in the last 20~years. EIE cross sections are important atomic parameters fundamental to understanding the spectroscopic properties of ions. The properties of an EBIT make it an ideal device to measure the EIE cross section of highly charged ions. As a matter of fact, a report of EIE measurement was among the first papers published on the first EBIT ever built, EBIT-I. Since then, a wide range of measurements have been performed for K-shell and L-shell highly charged ions of Ti, V, Cr, Mn, Fe, Xe, and Ba using a combination of crystal spectrometers and solid-state X-ray detectors. In the last few years, the measurements were extended to all strong Fe L-shell lines by using a 6 × 6 pixel array microcalorimeter.PACS Nos.: 32.30.Jc, 32.30.Rj, 34.50.Fa, 32.70.Cs

scholarly journals Electron Impact Excitation Cross Sections for B III

1983 ◽  
Vol 36 (5) ◽  
pp. 659
Author(s):  
PS Ganas ◽  
M Aryafar ◽  
LP Gately
Keyword(s):  
Electron Impact ◽  
Excited States ◽  
Cross Sections ◽  
Born Approximation ◽  
Oscillator Strengths ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Central Potential ◽  
Excitation Cross Sections ◽  
Generalized Oscillator

A realistic analytical central potential with two adjustable parameters is used to generate wavefunctions for the ground and excited states of doubly ionized boron. Generalized oscillator strengths and integrated cross sections from threshold up to 5 keY are calculated in the Born approximation for 2s-ns, 2s-np and 2s-nd excitations. Convenient analytic formulae for the cross sections are presented.

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