In‐Situ Fibrillation of Ny6/6 During Processing of PP/Ny6/6 Blends, Slightly Below the Ny6/6 Melting Temperature

2005 ◽  
Vol 44 (4) ◽  
pp. 495-515 ◽  
Author(s):  
J. Zoldan ◽  
A. Siegmann ◽  
M. Narkis
Polymer ◽  
2013 ◽  
Vol 54 (17) ◽  
pp. 4645-4652 ◽  
Author(s):  
Ali Rizvi ◽  
Alireza Tabatabaei ◽  
M. Reza Barzegari ◽  
S. Hassan Mahmood ◽  
Chul B. Park

1989 ◽  
Vol 167 ◽  
Author(s):  
Seyong Oh ◽  
Igor Y. Khandros ◽  
Janet L. Poetzinger

AbstractA real-time x-ray analysis technique has been developed and employed for in-situ investigation of solid and liquid state reactions in Au-Sn/Cu system as a function of temperature. Typically, 1 μm eutectic Au-Sn films were deposited on 1.5 μm Cu layers on Si wafers. Phase changes in Au-Sn films on Cu from ambient to above the eutectic temperature have been investigated. Cu diffusion into Au-Sn film above 250 °C resulted in a ternary Au-Sn-Cu compound and raised the melting temperature of the structure to about 325 °C. This affects joining characteristics of the Au-Sn metallization.


2019 ◽  
Vol 136 (21) ◽  
pp. 47557 ◽  
Author(s):  
Shanshan Luo ◽  
Jing Sun ◽  
Anrong Huang ◽  
Tingting Zhang ◽  
Liangqiang Wei ◽  
...  

2014 ◽  
Vol 989-994 ◽  
pp. 320-324
Author(s):  
Huan Long Yuan ◽  
Ze Hua Zhou ◽  
Ze Hua Wang ◽  
Zhao Jun Zhong ◽  
Xin Zhang ◽  
...  

Formation mechanism of TiC in Al matrix at a rather low melting temperature using in situ technology was studied. And effect of the melting temperature on the microstructure of in-situ TiC/Al composite was investigated. The results indicate that, the resultants of TiC and Al3Ti were found out in the matrix; however, no evidence showed that Al4C3, a resultant phase existed probably in TiC/Al composite in accordance with the relative reference, was found out. Compared to the sample of T750, more TiC and less Al3Ti existed in the sample of T850, and morphography of Al3Ti changed from block to bar with the increasing melting temperature. The melting temperature affected extremely the reaction speed and the resultants.


2006 ◽  
Vol 21 (2) ◽  
pp. 127-134 ◽  
Author(s):  
L. P. Tan ◽  
C. Y. Yue ◽  
X. Hu ◽  
K. Nakayama

2005 ◽  
Vol 475-479 ◽  
pp. 3875-3878 ◽  
Author(s):  
Hiroshi Fukushima ◽  
Isamu Kuchiwaki ◽  
Takahiro Hirabayashi

In situ high-resolution transmission electron microscopy experiments were applied to examine the nano-scale solidification process of boron-doped silicon from the liquid state. Fine particles of the specimen were first heated up to the melting temperature using a TEM heating-holder, and then gradually cooled across the melting temperature. The specimen was observed nearly along [001] direction. The lattice fringe of (220) plane was observed during solidification, and this part combined with the other liquid part to make a twist boundary. The angle between the (220) planes of these two crystal grains was close to the rotation angle of the (001) Σ5 twist boundary.


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