A Novel Approach to Rapid Determination of βS‐Globin Haplotypes: Sequencing of theAγ‐IVS‐II Region

Hemoglobin ◽  
2004 ◽  
Vol 28 (4) ◽  
pp. 317-323
Author(s):  
Amy E. Vinson ◽  
Aisha Walker ◽  
Dedrey Elam ◽  
Michele Glendenning ◽  
Ferdane Kutlar ◽  
...  
The Analyst ◽  
2011 ◽  
Vol 136 (12) ◽  
pp. 2635 ◽  
Author(s):  
Boguslaw Buszewski ◽  
Malgorzata Szultka ◽  
Pawel Olszowy ◽  
Szymon Bocian ◽  
Tomasz Ligor

2012 ◽  
Vol 4 (12) ◽  
pp. 4155 ◽  
Author(s):  
Fayezeh Samari ◽  
Bahram Hemmateenejad ◽  
Zahra Rezaei ◽  
Mojtaba Shamsipur

Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu

Author(s):  
Mark Morris ◽  
James Mohr ◽  
Esteban Ortiz ◽  
Steven Englebretson

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.


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