Investigation of Electrical Degradation Effects in Ferroelectric Thin Film Based Tunable Microwave Components

2002 ◽  
Vol 49 (1) ◽  
pp. 103-112 ◽  
Author(s):  
Konstantin Astafiev ◽  
Vladimir Sherman ◽  
Alexander Tagantsev ◽  
Nava Setter ◽  
Tatyana Rivkin ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Electrical Degradation ◽  
Microwave Components ◽  
Tunable Microwave

scholarly journals Tunable Zeroth-Order Resonator Based on Ferroelectric Materials

2021 ◽  
Author(s):  
Mohamed M. Mansour ◽  
Haruichi Kanaya
Keyword(s):  
Thin Film ◽  
Microelectromechanical Systems ◽  
Dynamic Range ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Ferroelectric Film ◽  
Zeroth Order ◽  
Microwave Components ◽  
Full Wave Analysis ◽  
Tunable Device

Tunable microwave devices have the benefits of added functionality, smaller form factor, lower cost, and lightweight, and are in great demand for future communications and radar applications as they can extend the operation over a wide dynamic range. Current tunable technologies include several schemes such as ferrites, semiconductors, microelectromechanical systems (MEMS), and ferroelectric thin films. While each technology has its own pros and cons, ferroelectric thin film-based technology has proved itself as the potential candidate for tunable devices due to its simple processes, low power consumption, high power handling, small size, and fast tuning. A tunable Composite Right Left-Handed Zeroth Order Resonator (CRLH ZOR) is introduced in this chapter and it relies mainly on the latest advancement in the ferroelectric materials. It is common that for achieving optimum performance for the resonant structure, this involves the incorporation of an additional tuning by either mechanical means (i.e. with tuning screws) or other coupling mechanisms. The integration between electronic tuning and High-Temperature Superconducting (HTS) components yields a high system performance without degradation of efficiency. This leads not only low-loss microwave components that could be fine-tuned for maximum efficiency but will provide a tunable device over a broadband frequency spectrum as well. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The key advantages of using ferroelectric are the potential for significant size-reduction of the microwave components and systems and the cabibility for integration with microelectronic circuits due to the utilization of thin and thick ferroelectric film technology. In this chapter, ZOR is discussed and the conceptual operation is introduced. The ZOR is designed and simulated by the full-wave analysis software. The response is studied using electromagnetic characteristics with the applied electric field, ferroelectric thickness, and the operating temperature.

Self-Assembled 3-Mercaptopropyltrimethoxysilane (MPS) ON Ba0.5Sr0.5TiO3 as an Adhesion Layer for Microwave Devices

2001 ◽  
Vol 666 ◽  
Author(s):  
Carlos R. Cabrera ◽  
Joseph D. Warner ◽  
Carl H. Mueller ◽  
Fred Van Keuls ◽  
Félix A. Miranda ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Ferroelectric Thin Film ◽  
Research Field ◽  
Self Assembled Monolayers ◽  
Adhesion Layer ◽  
Microwave Components ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Film Dielectric

ABSTRACTThe use of self-assembled monolayers in patterning, adhesion studies, corrosion protection, and electronic devices is a growing research field. Here we discuss the use of (3-mercaptopropyl)trimethoxysilane (MPS) as an adhesion layer in microwave components using metal-ferroelectric thin film-dielectric heterostructures. The MPS has been used as an adhesion layer between a ferroelectric thin film and gold (Au) in the development of tunable microwave components. The system studied was the metal/ferroelectric thin film/dielectric heterostructure with the MPS molecule as an adhesion layer between the metal and the ferroelectric thin film. Specifically, we have looked at the interface between the Au layer and the Ba0.5Sr0.5TiO3 (BSTO) ferroelectric thin film deposited on LaAlO3 (LAO). Typically, during metallization via e-beam evaporation, it is common to deposit a chrome or titanium adhesion layer (∼ 15 nm thick) between the Au and BSTO films. However, this underlayer may diffuse through the Au causing an increase of the RF losses of the device. Replacing the metal buffer layer interface with a self-assembled structure, such as MPS, can avoid the effect of inter- diffusion of chrome in the Au vapor deposit film. The surface modification of Ba0.5Sr0.5TiO3 (BSTO) thin film with MPS was studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The effectiveness of MPS self-assembled monolayers as an adhesion layer was determined by analyzing the performance of Au/MPS/BSTO/LAO interdigital capacitors as a function of dc voltage and temperature at 1 MHz.

Design of a hybrid ferroelectric thin film varactor for tunable microwave applications

2015 ◽  
Vol 585 ◽  
pp. 1-4 ◽  
Author(s):  
Su Sheng ◽  
Xiu-Zhang Wang ◽  
Hong-Ri Liu ◽  
Chao Jiang ◽  
C.K. Ong
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Tunable Microwave ◽  
Microwave Applications

scholarly journals Thin film multilayer conductor/ferroelectric tunable microwave components for communication applications

1997 ◽  
Vol 17 (1-4) ◽  
pp. 231-246 ◽  
Author(s):  
Felix A. Miranda ◽  
Robert R. Romanofsky ◽  
Frederick W. Van Keuls ◽  
Carl H. Mueller ◽  
Randolph E. Treece ◽  
...  
Keyword(s):  
Thin Film ◽  
Microwave Components ◽  
Tunable Microwave

THIN FILM FERROELECTRIC TUNABLE ZEROTH-ORDER RESONATOR BASED ON CRLH METAMATERIALS

2014 ◽  
Vol 23 (01) ◽  
pp. 1450013
Author(s):  
MOHAMED M. MANSOUR ◽  
MOSTAFA A. ELMALA ◽  
ABDEL-AZIZ T. SHALABY ◽  
EL-SAYED M. EL-RABAIE
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Optimal Performance ◽  
Resonant Structures ◽  
Full Wave ◽  
Electronic Tuning ◽  
Microwave Components ◽  
Full Wave Analysis ◽  
Electromagnetic Characteristics

In this paper, we propose a tunable CRLH ZOR based on the latest resurgent of ferroelectric materials. It is known that for most resonant structures, attainment of optimal performance requires some level of additional tuning through either mechanical means (i.e., with tuning screws) or other coupling mechanisms. Therefore, incorporation of electronic tuning into high temperature superconductor (HTS) material components without degradation of performance is very attractive. The result will be low-loss microwave components that could be fine-tuned for optimal performance, with the additional attribute of being tunable over a broadband frequency range. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The main driving force toward using the ferroelectric is the potential for substantial miniaturization of microwave components and systems and the potential for integration with microelectronic circuits due to the development of thin and thick film ferroelectric technology. The ZOR is designed, and simulated by the full-wave analysis software. The response shows a variation of electromagnetic characteristics with the applied electric field, ferroelectric thickness and the operating temperature.

Effect of Forming Gas on Properties of SrBi2Ta2O9 Ferroelectric Thin Film and Powder

2009 ◽  
Vol 24 (4) ◽  
pp. 737-740 ◽  
Author(s):  
Dong-Sheng WANG ◽  
Tao YU ◽  
An HU ◽  
Di WU ◽  
Ai-Dong LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film

Modeling the influence of the seeding layer on the transition behavior of a ferroelectric thin film

2011 ◽  
Vol 520 (1) ◽  
pp. 646-650 ◽  
Author(s):  
A. Oubelkacem ◽  
I. Essaoudi ◽  
A. Ainane ◽  
M. Saber ◽  
F. Dujardin
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Seeding Layer ◽  
Transition Behavior
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