ORIENTATION DEPENDENCE OF FERROELECTRIC AND DIELECTRIC PROPERTIES IN CaBi4Ti4O15 THIN FILMS

2009 ◽  
Vol 105 (1) ◽  
pp. 99-106
Author(s):  
D. DO ◽  
S. S. KIM ◽  
J. W. KIM ◽  
Y. I. LEE ◽  
A. S. BHALLA
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Orientation Dependence

Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films

2007 ◽  
Vol 90 (2) ◽  
pp. 022903 ◽  
Author(s):  
J. Miao ◽  
J. Yuan ◽  
H. Wu ◽  
S. B. Yang ◽  
B. Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Crystal Orientation ◽  
Orientation Dependence

Crystal orientation dependence of the in-plane dielectric properties for Ba(Sn0.15Ti0.85)O3 thin films

2008 ◽  
Vol 254 (16) ◽  
pp. 5120-5123 ◽  
Author(s):  
Sannian Song ◽  
Lina Gao ◽  
Jiwei Zhai ◽  
Xi Yao ◽  
Zhiqun Cheng
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Crystal Orientation ◽  
Orientation Dependence

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films

Characterization of Epitaxial Superconducting YBacuO Thin Films with Three Different Orientations

1989 ◽  
Vol 169 ◽  
Author(s):  
X.K. Wang ◽  
D.X. Li ◽  
S.N. Song ◽  
J.Q. Zheng ◽  
R.P.H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Orientation Dependence ◽  
Zero Field ◽  
Epitaxial Thin Films ◽  
Oriented Film ◽  
Zero Resistance ◽  
Xrd Patterns

AbstractEpitaxial thin films of YBaCuO were prepared by multilayer deposition from Y, Cu, and BaF2 sources with: (1) the a‐axis perpendicular to (100)SrTiO3; (2) the c‐axis perpendicular to (100)SrTiO3; and (3) the [110] axis perpendicular to (110)SrTiO3. XRD patterns as well as SEM and HREM images confirm that the films are highly oriented, essentially epitaxial. Both the a‐axis oriented and the c‐axis oriented films exhibit zero resistance at 91K. The [110] oriented film shows the sharpest transiton with a transition width of IK and zero resistance at 85K. The zero field critical current density, Jc, determined magnetically, is in excess of 107A/cm2 at 4.4K and 1.04 x 106A/cm2 at 77K for the c‐axis oriented film; for the a‐axis oriented film we obtained 6.7 x 106A/cm2 at 4.4K and 1.2 x 105A/cm2 at 77K. The orientation dependence of the critical current density in the basal plane of the a‐axis oriented film was studied. The largest Jc's occur along the in‐plane <100> axes of the substrate.

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

2013 ◽  
Vol 102 (2) ◽  
pp. 022904 ◽  
Author(s):  
Ayan Roy Chaudhuri ◽  
A. Fissel ◽  
V. R. Archakam ◽  
H. J. Osten
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Nitrogen Doping
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