High-resolution electron microscopy and X-ray diffraction characterization of alternately strained (GaAs)n (Gap)m (GaAs)n (InP)m superlattices grown by atomic layer molecular beam epitaxy
1990 ◽
Vol 87
(2)
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pp. 308-320
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2013 ◽
Vol 93
(9)
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pp. 1054-1064
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2008 ◽
Vol 181
(3)
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pp. 439-449
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1988 ◽
Vol 185
(1-6)
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