Determination of the Unit Cell for an Epitaxial Layer of Hg1-xCdxTe Deposited on GaAs

Stevenson et al. (1991) reported structural aspects of six metal organic chemical vapour deposition (MOCVD)-grown Hg1-xCdxTe epitaxial layers on novel GaAs substrates. Large layer miscuts (the angle between the surface and the Bragg planes of the nominal rientation) of 4�3� were reported for the samples of (311) and (3II) orientation, whereas the substrate miscuts were less than 1� (0�94� and 0�84� respectively).