scholarly journals Improvement of CdS?CuxS Solar Cell Performance by CdS Etching under Illumination

1992 ◽  
Vol 45 (1) ◽  
pp. 99 ◽  
Author(s):  
AM Al-Dhafiri

The influence of dark and light etching of CdS single crystals on the electrical and optical characteristics of the CdS-Cu",S heterojunction is investigated. It is shown through currentvoltage characteristics, spectral response and junction capacitance measurements that the junction of these cells is strongly affected by the presence of light during the etching process. It is found that when the CuS is formed on an etched CdS surface under light a chalcocite phase (CU2S) is obtained. In contrast, when the CuS layer is grown on a dark etched surface a mixture phase of chalcocite and djurleite (CUI� 96S) is found.

1986 ◽  
Vol 70 ◽  
Author(s):  
Chris Walker ◽  
Russell Hollingsworth ◽  
Joe del Cueto ◽  
Arun Madan

The use of transparent conducting oxides (TCO) as electrical contacts in a-Si:H solar cells has stimulated interest in the multitude of effects that these layers have on a-Si:H solar cell performance. The study of a-Si:H p-i-n junctions using a TCO contact involves many factors such as, interdiffusion, transmission, reflection, and resistivity. In this paper, we attempt to distinguish between these factors through the role they play in determining the solar cell device performance. Devices were characterized via dark and illuminated current vs. voltage (I-V) measurements, and spectral response. It was found that the properties of the TCO have an important role in influencing FF and Jsc in the devices.


2001 ◽  
Vol 664 ◽  
Author(s):  
B.A. Korevaar ◽  
C. Smit ◽  
R.A.C.M.M. van Swaaij ◽  
D.C. Schram ◽  
M.C.M. van de Sanden

ABSTRACTA cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates larger than 2 Å/s. Implementation into a single junction p-i-n solar cell resulted in initial efficiencies of ∼7%, although all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. The somewhat lower efficiency is due to a smaller fill factor. Spectral response measurements, illuminated J,V- measurements, and simulations indicate that a higher local defect density in the region near the p-i interface might be responsible for the smaller fill factor in comparison with conventional low- rate RF-PECVD. The higher defect density is most likely caused by the initial growth in the first 10 to 50 nm. Therefore, controlled initial growth of the intrinsic layer is suggested for good solar cell performance.


2020 ◽  
pp. 114-119

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.


Author(s):  
Apichat Phengdaam ◽  
Supeera Nootchanat ◽  
Ryousuke Ishikawa ◽  
Chutiparn Lertvachirapaiboon ◽  
Kazunari Shinbo ◽  
...  

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