scholarly journals Excitation of Swift Heavy Ions in Foil Targets. V Production of Rydberg States

1991 ◽  
Vol 44 (4) ◽  
pp. 397
Author(s):  
HJ Hay ◽  
PB Treacy

The results are summarised of previous experiments on the beam-foil excitation of Rydberg states of Br ions containing L vacancies. These show two populations, namely one with high angular momentum .e leading to 'yrast' cascades, and a separate low-.e population. Models for the production of such states in solid targets are discussed, and experiments to test the predictions of these models are described. The target-thickness dependence and downstream decay of the 'yrast' states is consistent with a standard charge-changing and capture model. The low-.e population is very sensitive to the presence of an applied electric field, and it is concluded that such Rydberg states are partly created by the radiative recapture of free 'convoy' electrons which travel physically near their host ions. Detailed level and decay schemes are described for the Br2S+, Ne-like system.

1984 ◽  
Vol 30 (2) ◽  
pp. 1125-1126 ◽  
Author(s):  
H. -D. Betz ◽  
J. Rothermel ◽  
D. Röschenthaler

1987 ◽  
Vol 40 (2) ◽  
pp. 125 ◽  
Author(s):  
HJ Hay ◽  
PB Treacy

Results are reviewed of experiments in which Rydberg states with high principal quantum numbers (n :<:: 20) are excited by foil targets in transmitted heavy ions. A uniform procedure is described for analysis of the decays downstream of such states using a Monte Carlo method. Previously observed X-ray decays of 130 MeV Br Rydberg ions into L vacancies are analysed and numerical populations of initially generated states are deduced. It is found that the initial states may be described as mainly statistical, i.e. all substates having equal weights, with 63% of initial ions in such states. Some X-ray lines are found to come from high-n (:<:: 50), low-/ (;S; 2) states. There is evidence for an unknown post-foil mechanism feeding the 3s electron state.


1983 ◽  
Vol 28 (2) ◽  
pp. 1193-1194 ◽  
Author(s):  
E. P. Kanter ◽  
D. Schneider ◽  
Z. Vager

1972 ◽  
Vol 33 (C1) ◽  
pp. C1-63-C1-67 ◽  
Author(s):  
M. BERTOLOTTI ◽  
B. DAINO ◽  
P. Di PORTO ◽  
F. SCUDIERI ◽  
D. SETTE

2012 ◽  
Vol 15 (2-3) ◽  
pp. 127-139
Author(s):  
Tung Tran Anh ◽  
Laurent Berquez ◽  
Laurent Boudou ◽  
Juan Martinez-Vega ◽  
Alain Lacarnoy

2008 ◽  
Vol 75 (1) ◽  
Author(s):  
Q. Li ◽  
Y. H. Chen

A semi-permeable interface crack in infinite elastic dielectric/piezoelectric bimaterials under combined electric and mechanical loading is studied by using the Stroh complex variable theory. Attention is focused on the influence induced from the permittivity of the medium inside the crack gap on the near-tip singularity and on the energy release rate (ERR). Thirty five kinds of such bimaterials are considered, which are constructed by five kinds of elastic dielectrics and seven kinds of piezoelectrics, respectively. Numerical results for the interface crack tip singularities are calculated. We demonstrate that, whatever the dielectric phase is much softer or much harder than the piezoelectric phase, the structure of the singular field near the semi-permeable interface crack tip in such bimaterials always consists of the singularity r−1∕2 and a pair of oscillatory singularities r−1∕2±iε. Calculated values of the oscillatory index ε for the 35 kinds of bimaterials are presented in tables, which are always within the range between 0.046 and 0.088. Energy analyses for five kinds of such bimaterials constructed by PZT-4 and the five kinds of elastic dielectrics are studied in more detail under four different cases: (i) the crack is electrically conducting, (ii) the crack gap is filled with air/vacuum, (iii) the crack gap is filled with silicon oil, and (iv) the crack is electrically impermeable. Detailed comparisons on the variable tendencies of the crack tip ERR against the applied electric field are given under some practical electromechanical loading levels. We conclude that the different values of the permittivity have no influence on the crack tip singularity but have significant influences on the crack tip ERR. We also conclude that the previous investigations under the impermeable crack model are incorrect since the results of the ERR for the impermeable crack show significant discrepancies from those for the semi-permeable crack, whereas the previous investigations under the conducting crack model may be accepted in a tolerant way since the results of the ERR show very small discrepancies from those for the semi-permeable crack, especially when the crack gap is filled with silicon oil. In all cases under consideration the curves of the ERR for silicon oil are more likely tending to those for the conducting crack rather than to those for air or vacuum. Finally, we conclude that the variable tendencies of the ERR against the applied electric field have an interesting load-dependent feature when the applied mechanical loading increases. This feature is due to the nonlinear relation between the normal electric displacement component and the applied electromechanical loadings from a quadratic equation.


2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.


The Analyst ◽  
2020 ◽  
Vol 145 (6) ◽  
pp. 2412-2419 ◽  
Author(s):  
Rachel N. Deraney ◽  
Lindsay Schneider ◽  
Anubhav Tripathi

NA extraction and purification utilitzing a microfluidic chip with applied electric field to induce electroosmotic flow opposite the magnetic NA-bound bead mix.


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