scholarly journals Ion Scattering Spectrometry

1980 ◽  
Vol 33 (5) ◽  
pp. 843 ◽  
Author(s):  
RJ MacDonald
Keyword(s):  
Interatomic Potential ◽  
Photon Emission ◽  
Target Surface ◽  
Surface Region ◽  
Crystallographic Structure ◽  
Ion Scattering ◽  
Near Surface ◽  
Double Collision ◽  
Neutralization Factor

The scattering of ions from the surface and near surface region is a common method of analyzing solid surfaces. The basic principles of ion scattering spectrometry are reviewed with emphasis on those factors which affect the interpretation of the scattering measurements. In particular we emphasize the role of the interatomic potential and the neutralization factor involved in ion-surface scattering. Several aspects of ion scattering spectrometry are then outlined, including its application to studies of the composition and crystallographic structure of surfaces. Some factors of ion scattering spectrometry peculiar to surfaces are mentioned, e.g. the sequential 'double' collision event. The use of photon emission studies as a means of inferring something of the neutralization processes involved is briefly outlined, emphasizing the study of polarized emission from scattered ions at glancing incidence to the target surface.

scholarly journals The Study of Surfaces Using Ion Beams

1990 ◽  
Vol 43 (5) ◽  
pp. 601 ◽  
Author(s):  
DJ O'Connor ◽  
BV King ◽  
RJ MacDonald ◽  
YC Shen ◽  
Xu Chen
Keyword(s):  
Subsequent Development ◽  
Surface Region ◽  
Atomic Layer ◽  
Ion Beams ◽  
Specific Information ◽  
Ion Scattering ◽  
Near Surface ◽  
Methods Of Analysis ◽  
Wide Range ◽  
Compositional Information

The study of surfaces has progressed by the development of techniques which use different probing species in the form of electrons, ions and photons. Specialisation within the use of each probe has resulted in the subsequent development of methods of analysis tuned to obtain specific information about a surface. In this presentation the various uses of ion scattering spectrometry over a wide range of energies will be reviewed to illustrate how it has been successfully used to yield structural and compositional information of the surface atomic layer and the near surface region.

SURFACE AND INTERFACE INVESTIGATION OF NANOMETRIC DIELECTRIC FILMS ON Si AND ON SiC

2002 ◽  
Vol 09 (01) ◽  
pp. 393-399 ◽  
Author(s):  
E. B. O. DA ROSA ◽  
C. KRUG ◽  
C. RADTKE ◽  
R. P. PEZZI ◽  
L. MIOTTI ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Surface Region ◽  
Oxidation Products ◽  
Dielectric Films ◽  
Ion Scattering ◽  
Initial Oxidation ◽  
Near Surface ◽  
Surface And Interface ◽  
Low Energy Ion Scattering

Dielectric films on Si or SiC were investigated using angle-resolved X-ray photoelectron spectroscopy (ARXPS) and ion beam analysis techniques, namely high and low energy ion scattering (RBS and LEIS) and narrow nuclear resonance profiling (NRP) combined with isotopic substitution. For the Si substrate, attention was focused on the thermal stability of materials candidate to replacing SiO 2 in Si-based microelectronic devices (so-called "high-k dielectrics"): Al 2 O 3, ZrSi x O y, ZrAl x O y, HfSi x O y, and GdSi x O y. Mobility of different atomic species — especially Si and O — was observed at both the surface of the films and the interface with Si. Such atomic transport may have serious consequences concerning application of these materials in the microelectronics industry. For the SiC substrate, attention was focused on the initial stages of thermal oxidation in O 2, seeking an understanding of its poorer electrical quality as compared to SiO 2– Si . It was found that the initial oxidation products are silicon oxycarbides ( SiC x O y), while for longer oxidation times a mixture of SiC x O y and SiO2 is formed in the near surface region of the growing film. The composition of the near surface region of such thin films is very similar to that reported in previous investigations for the near interface region when thicker oxides films are grown on SiC.

On the use of ion scattering to examine the role of hydrogen in the reduction of TiO2

1993 ◽  
Vol 8 (7) ◽  
pp. 1629-1634 ◽  
Author(s):  
W.E. Wallace ◽  
Q. Zhong ◽  
J. Genzer ◽  
R.J. Composto ◽  
D.A. Bonnell
Keyword(s):  
Concentration Profile ◽  
Hydrogen Diffusion ◽  
Rutherford Backscattering Spectrometry ◽  
Oxygen Deficiency ◽  
Sample Surface ◽  
Titanium Concentration ◽  
Ion Scattering ◽  
Near Surface ◽  
Surface Hydrogen

Rutherford backscattering spectrometry (RBS) was used to measure the titanium concentration profile for hydrogen-reduced, vacuum-reduced, and as-received, stoichiometric rutile. These profiles give the degree of reduction, specifically, the extent of oxygen deficiency, as a function of depth below the sample surface. Using forward-recoil spectrometry (FRES), the hydrogen-reduced rutile was found to contain more bulk and near-surface hydrogen than the as-received, stoichiometric rutile. This observation provides additional evidence for a hydrogen-diffusion model for the reduction of rutile in a hydrogen environment.

scholarly journals Simultaneous scanning near-field optical and X-ray diffraction microscopy for correlative nanoscale structure–property characterization

2019 ◽  
Vol 26 (5) ◽  
pp. 1790-1796 ◽  
Author(s):  
Qian Li ◽  
Samuel D. Marks ◽  
Sunil Bean ◽  
Michael Fisher ◽  
Donald A. Walko ◽  
...  
Keyword(s):  
Multimodal Imaging ◽  
Near Field ◽  
Surface Region ◽  
Crystallographic Structure ◽  
Structure Property ◽  
X Ray Diffraction ◽  
Mechanical Pressure ◽  
Near Surface ◽  
X Ray ◽  
Nanoscale Characterization

A multimodal imaging instrument has been developed that integrates scanning near-field optical microscopy with nanofocused synchrotron X-ray diffraction imaging. The instrument allows for the simultaneous nanoscale characterization of electronic/near-field optical properties of materials together with their crystallographic structure, facilitating the investigation of local structure–property relationships. The design, implementation and operating procedures of this instrument are reported. The scientific capabilities are demonstrated in a proof-of-principle study of the insulator–metal phase transition in samarium sulfide (SmS) single crystals induced by applying mechanical pressure via a scanning tip. The multimodal imaging of an in situ tip-written region shows that the near-field optical reflectivity can be correlated with the heterogeneously transformed structure of the near-surface region of the crystal.

scholarly journals Исследование радиационных эффектов в МОП-транзиcторе с p-каналом

2020 ◽  
Vol 54 (8) ◽  
pp. 729
Author(s):  
А.В. Кузьминова ◽  
Н.А Куликов ◽  
В.Д. Попов
Keyword(s):  
Surface Defect ◽  
Surface Defects ◽  
Defect Formation ◽  
Surface Region ◽  
Hot Electrons ◽  
Formation Processes ◽  
Passive Mode ◽  
Near Surface ◽  
Mos Transistor

The effect of gamma radiation on the formation of surface defects at the Si−SiO2 interface in a MOS transistor with a p-channel in the passive mode is considered. Several surface defect formation processes were observed. The role of molecular hydrogen in the gate oxide of the MOS transistor and ”hot“ electrons formed in the near-surface region of silicon is shown.

Preparation of cross-sectional samples for near-surface TEM studies

1987 ◽  
Vol 45 ◽  
pp. 380-381
Author(s):  
R.C. Dickenson ◽  
K.R. Lawless
Keyword(s):  
Standard Sample ◽  
Surface Region ◽  
Specimen Preparation ◽  
Thick Sheet ◽  
Drill Bit ◽  
Sample Holder ◽  
Metal Interface ◽  
Cross Sectional ◽  
Near Surface ◽  
Cold Worked

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.

The Effects of Ion Implantation on the Surface Features of Inconel 600

1985 ◽  
Vol 43 ◽  
pp. 288-289
Author(s):  
John D. Rubio
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Nuclear Power ◽  
Power Plants ◽  
Surface Region ◽  
Selective Dissolution ◽  
Boundary Region ◽  
Near Surface ◽  
Inconel 600 ◽  
Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

1994 ◽  
Vol 52 ◽  
pp. 636-637
Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard
Keyword(s):  
Aluminum Nitride ◽  
Laser Irradiation ◽  
Electroless Deposition ◽  
Thermal Evaporation ◽  
Surface Region ◽  
Near Surface ◽  
Laser Patterning ◽  
Electroless Copper ◽  
Excimer Laser Irradiation ◽  
Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

Sign in / Sign up

Export Citation Format

Share Document