scholarly journals Electron Scattering and Photonuclear Reactions at the MIT Bates Linac

1976 ◽  
Vol 29 (6) ◽  
pp. 405
Author(s):  
W Turchinetz
Keyword(s):  
High Resolution ◽  
Electron Scattering ◽  
Preliminary Data ◽  
Linear Accelerator ◽  
High Energy ◽  
Photonuclear Reactions ◽  
Electron Linear Accelerator ◽  
Accelerator Facility ◽  
Resolution Electron

Progress is reported in the development of the Bates Electron Linear Accelerator Facility at MIT. Preliminary data are shown for high resolution electron scattering, and for the high energy photoproton reaction on 160 and the threshold photoproduction of pions on 12C and llB.

High resolution electron scattering facility at the Darmstadt linear accelerator (DALINAC)

1978 ◽  
Vol 153 (1) ◽  
pp. 9-15 ◽  
Author(s):  
H.-D. Gräf ◽  
H. Miska ◽  
E. Spamer ◽  
O. Titze ◽  
Th. Walcher
Keyword(s):  
High Resolution ◽  
Electron Scattering ◽  
Linear Accelerator ◽  
Resolution Electron

High resolution electron scattering facility at the Darmstadt linear accelerator (DALINAC)

1978 ◽  
Vol 153 (1) ◽  
pp. 17-28 ◽  
Author(s):  
Th. Walcher ◽  
R. Frey ◽  
H.-D. Gräf ◽  
E. Spamer ◽  
H. Theissen
Keyword(s):  
High Resolution ◽  
Electron Scattering ◽  
Linear Accelerator ◽  
Resolution Electron

High resolution electron scattering facility at the Darmstadt linear accelerator (DALINAC) IV. Data processing

1978 ◽  
Vol 153 (1) ◽  
pp. 43-50 ◽  
Author(s):  
J. Foh ◽  
R. Frey ◽  
R. Scheneider ◽  
D. Schüll ◽  
A. Schwierczinski ◽  
...  
Keyword(s):  
High Resolution ◽  
Data Processing ◽  
Electron Scattering ◽  
Linear Accelerator ◽  
Resolution Electron

High resolution electron scattering facility at the Darmstadt linear accelerator (DALINAC)

1978 ◽  
Vol 153 (1) ◽  
pp. 29-41 ◽  
Author(s):  
D. Schüll ◽  
J. Foh ◽  
H.-D. Gräf ◽  
H. Miska ◽  
R. Schneider ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Scattering ◽  
Linear Accelerator ◽  
Resolution Electron

Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
Philomela Komninou ◽  
Joseph Kioseoglou ◽  
Eirini Sarigiannidou ◽  
George P. Dimitrakopulos ◽  
Thomas Kehagias ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Low Energy ◽  
Inversion Domain ◽  
Resolution Electron ◽  
Domain Boundaries ◽  
Inversion Domain Boundaries

ABSTRACTThe interaction of growth intrinsic stacking faults with inversion domain boundaries in GaN epitaxial layers is studied by high resolution electron microscopy. It is observed that stacking faults may mediate a structural transformation of inversion domain boundaries, from the low energy types, known as IDB boundaries, to the high energy ones, known as Holt-type boundaries. Such interactions may be attributed to the different growth rates of adjacent domains of inverse polarity.

An investigation of grain boundaries in submicrometer-grained Al-Mg solid solution alloys using high-resolution electron microscopy

1996 ◽  
Vol 11 (8) ◽  
pp. 1880-1890 ◽  
Author(s):  
Zenji Horita ◽  
David J. Smith ◽  
Minoru Furukawa ◽  
Minoru Nemoto ◽  
Ruslan Z. Valiev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
High Resolution ◽  
Grain Boundaries ◽  
Boundary Migration ◽  
Boundary Energy ◽  
High Resolution Electron Microscopy ◽  
High Energy ◽  
Structural Features ◽  
Resolution Electron

High-resolution electron microscopy was used to examine the structural features of grain boundaries in Al–1.5% Mg and Al–3% Mg solid solution alloys produced with submicrometer grain sizes using an intense plastic straining technique. The grain boundaries were mostly curved or wavy along their length, and some portions were corrugated with regular or irregular arrangements of facets and steps. During exposure to high-energy electrons, grain boundary migration occurred to reduce the number of facets and thus to reduce the total boundary energy. The observed features demonstrate conclusively that the grain boundaries in these submicrometer-grained materials are in a high-energy nonequilibrium configuration.

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