Synthesis and characterization of some alkoxide derivatives of nickel(II)

1980 ◽  
Vol 33 (1) ◽  
pp. 37 ◽  
Author(s):  
BP Baranwal ◽  
RC Mehrotra
Keyword(s):  
Magnetic Susceptibility ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Synthesis And Characterization ◽  
Element Analysis ◽  
Molar Ratios ◽  
Spin Resonance ◽  
Derivatives Of ◽  
Interchange Reactions

A number of alkoxides and chloride alkoxides of nickel(II) of the types Ni(OR)2, Ni(OR)Cl and Ni(OR)Cl,ROH have been synthesized from the reactions of anhydrous nickel(II) chloride with lithium or sodium alkoxides in appropriate molar ratios. These derivatives have been characterized by element analysis, infrared, electronic reflectance and electron spin resonance spectra in addition to magnetic susceptibility measurements. Alcohol interchange reactions in these alkoxide derivatives have been studied in detail.

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

scholarly journals Characterization of manganese in coal by electron spin resonance.

1985 ◽  
Vol 34 (5) ◽  
pp. 243-247 ◽  
Author(s):  
Junichi SHIDA ◽  
Mamoru ITOH ◽  
Tateaki OGATA ◽  
Hitoshi KAMADA
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance

scholarly journals Two-dimensional pulsed electron spin resonance characterization of 15 N-labeled archaeal Rieske-type ferredoxin

FEBS Letters ◽  
2009 ◽  
Vol 583 (21) ◽  
pp. 3467-3472 ◽  
Author(s):  
Toshio Iwasaki ◽  
Rimma I. Samoilova ◽  
Asako Kounosu ◽  
Sergei A. Dikanov
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Two Dimensional ◽  
Spin Resonance
Sign in / Sign up

Export Citation Format

Share Document