A Fortuitous, Mild Catalytic Carbon–Carbon Bond Hydrogenolysis by a Phosphine-Free Catalyst

2016 ◽  
Vol 69 (5) ◽  
pp. 561 ◽  
Author(s):  
Loorthuraja Rasu ◽  
Ben Rennie ◽  
Mark Miskolzie ◽  
Steven H. Bergens

The putative catalyst trans-[Ru((S,S)-skewphos)(H)2((R,R)-dpen)] (skewphos = 2,4-bis(diphenylphosphino)pentane; dpen = 1,2-diphenylethylenediamine) transforms the trifluoroacetyl amide 2,2,2-trifluoro-1-(piperidin-1-yl)ethanone under mild conditions (4 atm H2, room temperature, 4–24 h, 1 mol-% Ru, 15 mol-% KOtBu in tetrahydrofuran) to generate the formylated amine 1-formylpiperidine and fluoroform via C–C bond hydrogenolysis. Catalysts are also prepared by reacting cis-[Ru(η3-C3H5)(MeCN)2(COD)]BF4 (COD = 1,5-cyclooctadiene) with diamine ligands in situ. Low-temperature NMR studies provided insight into this reaction.

2002 ◽  
Vol 2002 (9) ◽  
pp. 439-441 ◽  
Author(s):  
Xuesen Fan ◽  
Yongmin Zhang

Promoted by SmI3, phenacyl thiocyanates can undergo efficiently dethiocyanation and thus give a samarium enolate intermediate. On treatment with water or aldehydes and water subsequently, this in situ generated intermediate can give acetophenones or α,β-unsaturated ketones respectively in high yields under mild conditions.


2011 ◽  
Vol 30 (14) ◽  
pp. 3691-3693 ◽  
Author(s):  
Siu Yin Lee ◽  
Tsz Ho Lai ◽  
Kwong Shing Choi ◽  
Kin Shing Chan

2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.


2017 ◽  
Vol 15 (15) ◽  
pp. 3165-3169 ◽  
Author(s):  
Ming-Tao Chen ◽  
Xia You ◽  
Li-Gang Bai ◽  
Qun-Li Luo

Heteroarene N-oxides were successfully converted to heteroarylphosphonates in a very short time under mild conditions through in situ activation with CBrCl3.


2020 ◽  
Vol 124 (39) ◽  
pp. 21396-21406
Author(s):  
Jincheng Mu ◽  
Xinyong Li ◽  
Xinyang Wang ◽  
Shiying Fan ◽  
Zhifan Yin ◽  
...  

2017 ◽  
Vol 13 ◽  
pp. 2023-2027 ◽  
Author(s):  
Hao Wang ◽  
Cui Chen ◽  
Weibing Liu ◽  
Zhibo Zhu

We developed a direct vicinal difunctionalization of alkenes with iodine and TBHP at room temperature. This iodination and peroxidation in a one-pot synthesis produces 1-(tert-butylperoxy)-2-iodoethanes, which are inaccessible through conventional synthetic methods. This method generates multiple radical intermediates in situ and has excellent regioselectivity, a broad substrate scope and mild conditions. The iodine and peroxide groups of 1-(tert-butylperoxy)-2-iodoethanes have several potential applications and allow further chemical modifications, enabling the preparation of synthetically valuable molecules.


1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.


1988 ◽  
Vol 100 ◽  
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.


Sign in / Sign up

Export Citation Format

Share Document