Recently, A number of the scientists have studied GaAs/si In this work, we intend to investigateo the interface and the twins in GaAs/Si which was grown by both MBE and MOCVD. TEM studies were performed on (011) crosssections of the GaAs/Si using TEM and HREM. TEM specimens were produced by sandwiching, dimpling, and atom- milling with ˜5KV Ar ions at liquid nitrogen temperatures.It showed the cross-sectional images in GaAs/Si in Fig.la, there were a lot of defects in the interface of GaAs/Si. Fig.lb obtained using the weak beam tecnique have showed the distribution of the twins and the defects to same interface of Fig.la. As well known,in the process of growth, deformation and phase transformation for crystals, it is not only often to produce the twins, but also the twins will be continuously produced in the twins, called secondary twins. If the phenomenon which continued to produce twins in the twins would be sustained by many times, then called trine, quaternary and multiple twins boundary will emerge from the interface. In the deformation, the twins on two difference twins plane intersect with each other in move, so that, the secondary twins may be produced in the crossing section, see Fig.1b and 2. It is interesting to compare epilayers grown by MOCVD and MBE, that reveals a systematic difference between the twinning produced by the two processes.MBE growth results in very large numbers of microtwins ˜50 Å -100 Å in width in the first 1000Å or so of the layer. MOCVD tends to generate much smaller numbers of large twins (up to 1.5μ) which can penetrate right through a thick (>10μm) epilayer, Fig.1. But, by way of exception, in our research in this year, the dislocations in GaAs/Si were observed only, there was nothing for twins, Fig.3.These twins grow up in {111} , i . e . , {111} is twinning plane, section direction <112>. microtwins with 3 times that of a lattice period(Fig.4).