scholarly journals Ionic Relations of Cells of Ohara Australis VII. The Separate Electrical Oharacteristics of the Plasmalemma and Tonoplast

1964 ◽  
Vol 17 (1) ◽  
pp. 62 ◽  
Author(s):  
GP Findlay ◽  
AB Hope
Keyword(s):  
Electrical Properties ◽  
Ionic Relations

A study of the electrical properties of tho two membranes bounding the cytoplasm in almra cells was made. Three electrodes were employed: a metal probe to pass current, inserted longitudinally into the vacuole, and two glass microelectrodes, to measure potential differences, inserted into the vacuole and cytoplasm.

scholarly journals Ionic Relations of Cells of Chara Australls X. Effects of Bicarbonate Ions on Electrical Properties

1965 ◽  
Vol 18 (4) ◽  
pp. 789 ◽  
Author(s):  
AB Hope
Keyword(s):  
Electrical Properties ◽  
External Medium ◽  
Membrane Resistance ◽  
Potential Difference ◽  
Bicarbonate Ions ◽  
Ionic Relations

When bicarbonate ions were added to the external medium the plasmalemma of cells of Ohwra australis became hyperpolarized. The potential difference (p.d.) frequently changed from -150 or -160 mY to -200 or -220 mY. An increal!El in membrane resistance also occurred.

scholarly journals Ionic Relations of Marine Algae I. Griffithsia: Membrane Electrical Properties

1969 ◽  
Vol 22 (5) ◽  
pp. 1163 ◽  
Author(s):  
GP Findlay ◽  
AB Hope ◽  
EJ Williams
Keyword(s):  
Electrical Properties ◽  
Marine Algae ◽  
Potassium Concentration ◽  
Membrane Properties ◽  
Ionic Relations ◽  
Marine Algal ◽  
Ionic Movements

Several species of Griifithsia were studied as part of an investigation into the ionic movements and membrane properties in marine algal cells. Vacuolar potassium concentration was normally 500-600 mM, that of sodium 30--90 mM, and of chloride 600-650mM.

scholarly journals Ionic Relations of Marine Algae III. Chaetomorpha: Membrane Electrical Properties and Chloride Fluxes

1971 ◽  
Vol 24 (3) ◽  
pp. 731 ◽  
Author(s):  
GP Findlay ◽  
AB Hope ◽  
MG Pitman ◽  
FA Smith ◽  
NA Walker
Keyword(s):  
Electrical Properties ◽  
Green Alga ◽  
Electric Potential ◽  
Electrical Resistance ◽  
Marine Algae ◽  
Negative State ◽  
Ionic Relations ◽  
The Difference ◽  
Usual State ◽  
Positive State

In the large coenocytic cell of the marine green alga Chaetomorpha darwin ii, the electric potential difference, .pvo, between the vacuole and the outside seawater can have either of two distinct states, a positive, and more usual state, with .pvo = +5 mY, and a negative state with .pvo = - 29 m V. The p.d. across the plasmalemma of the cell was approximately -72 mY, and the difference between the positive and negative states occurred at the tonoplast with .pvc = + 77 m V or + 43 m V respectively. In the change from the positive state to the negative state, the electrical resistance of the plasmalemma increased from 510 to 750 n cm2 , and the resistance of the tonoplast increased from 4900 to 7100 n cm2

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Formation of high temperature phase in flash-evaporated SnSe films

1990 ◽  
Vol 48 (4) ◽  
pp. 698-699
Author(s):  
J.P.S. Hanjra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Gap ◽  
Dominant Role ◽  
Fine Powder ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Water Mixture ◽  
Flash Evaporation ◽  
Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

The electrical properties of germanium semiconductors at low temperatures

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 834-844 ◽  
Author(s):  
H FRITZSCHE ◽  
K LARKHOROVITZ
Keyword(s):  
Electrical Properties ◽  
Low Temperatures
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