ABSTRACTPulsed laser induced crystallization of amorphous GeSb films has been studied as a function of the laser pulse duration. The energy density crystallization threshold has been determined for pulses in the range from 400 fs to 8 ns. The threshold is observed to increase substantially for pulse durations in the ns range due to the existence of heat flow through the substrate while the pulse is still being absorbed. The energy density crystallization threshold remains constant within the experimental resolution as the pulse duration is decreased down to 800 fs. For the shortest pulse length used, (400 fs), a decrease in the threshold is observed, suggesting the possible existence of electronic excitation enhanced crystallization.
Abstract
Targets with microstructured front surfaces have shown great potential in improving high-intensity laser–matter interaction. We present cone-shaped microstructures made out of silicon and titanium created by ultrashort laser pulse processing with different characteristics. In addition, we illustrate a process chain based on moulding to recreate the laser-processed samples out of polydimethylsiloxane, polystyrol and copper. With all described methods, samples of large sizes can be manufactured, therefore allowing time-efficient, cost-reduced and reliable ways to fabricate large quantities of identical targets.
Ultrashort laser pulse ablation of copper, silicon and gelatin: effect of the pulse duration on the ablation thresholds and the incubation coefficients