Interatomic interactions and thermally induced shifts and broadenings of energy levels of atoms in circular Rydberg states

2019 ◽  
Vol 49 (5) ◽  
pp. 464-472 ◽  
Author(s):  
A A Kamenski ◽  
V D Ovsiannikov ◽  
I L Glukhov
1999 ◽  
Vol 14 (2) ◽  
pp. 371-376 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Jiro Sakata ◽  
Yasunori Taga

A systematic investigation has been made on surface defect states of crystallites in the crystallization process of sputtered amorphous silicon films by isothermal annealing. Transmission electron microscopic observations indicate a pronounced vertical columnar structure in the upper part of the films, where the crystallization is delayed. Admittance spectroscopy reveals that two newly generated energy levels with the crystallization are attributed to the crystallites in the lower and upper parts of the films in view of the anisotropic crystallization. These thermally induced changes can be well explained by Si–Si shearing modes at the interfaces of crystallites through the process of crystallization.


1997 ◽  
Vol 55 (2) ◽  
pp. 1056-1063 ◽  
Author(s):  
M. D. Lindsay ◽  
F. M. Pipkin
Keyword(s):  

2020 ◽  
Vol 98 (3) ◽  
pp. 274-286
Author(s):  
Ejaz Ahmed ◽  
Salman Raza ◽  
M. Noman Hameed ◽  
Muhammad Farooq ◽  
Jehan Akbar

Theoretical computations of Rydberg energy levels series and atomic lifetimes for singly ionized boron (B II), silicon (Si II), and germanium (Ge II) have been performed. In the theoretical computation weakest bound electron potential model theory (WBEPMT) is employed. Regularities of changes in quantum defects for the following Rydberg states series: 2sns (1S0), 2snp ([Formula: see text]), 2snf ([Formula: see text], [Formula: see text], [Formula: see text]), 2snf ([Formula: see text]) of B II; 3s2ns (2S1/2), 3s2nd (2D3/2,5/2), 3s2nf ([Formula: see text]), 3s2ng (2G7/2,9/2) of Si II; and 4s2nf ([Formula: see text]), 4s2nf ([Formula: see text]), 4s2ng (2G7/2,9/2) of Ge II, up to n = 50 are presented. The atomic lifetimes of the following series: 1s22sns (1S0), 1s22snp ([Formula: see text]), 1s22snd (1D2) of B II; 3s2ns (2S1/2), 3s2nf ([Formula: see text]) of Si II; and 4s2ns (2S1/2) of Ge II are predicted with good accuracy. Some high-lying Rydberg energy levels and atomic lifetimes have been presented for the first time. The series for which Rydberg energy levels are computed in this work are unperturbed series.


1971 ◽  
Vol 49 (1) ◽  
pp. 76-89 ◽  
Author(s):  
F. Ackermann

The two mutually related bands B′2Δ–C2Π (7,0) → N2Δ–C2Π (0,0) and N2Δ–C2Π (0,0) → B′2Δ–C2Π (7,0) are observed with high resolution between 6620 and 6520 Å in the emission spectrum of the NO molecule. They are the 2Δ–2Π part of the 4d–3p transitions between the two Rydberg states N2Δ(4dδ) and C2Π (3pπ) of the molecule. A rotational analysis is carried out for both bands, and the very close similarity of the structure of these bands with the structure of the corresponding 2Δ–2Π bands of the 3d–3p transitions, observed in the infrared, is demonstrated. The two upper levels in these nd–3p transitions represent examples of mixed states showing complete changeover with increasing rotation from the Rydberg type with no spin–orbit coupling (AR = 0.00 ± 0.05 cm−1) to an inverted valence type and vice versa. The behavior of the doublet splitting is studied with regard to this changeover. The lower levels of the Rydberg state C2Π also are mixtures with levels of a valence state. The mixing with B2Π (ν = 7) is comparatively small in the C2Π (ν = 0) level, but it strongly affects the energy levels with the lowest J values. The beginning of one of the two bands observed in the visible, therefore, forms the (7,7) band of the system B′2ΔB2Π. Constants of the states involved are determined.


2004 ◽  
Vol 82 (7) ◽  
pp. 523-529 ◽  
Author(s):  
N W Zheng ◽  
Z Li ◽  
D Ma ◽  
T Zhou ◽  
J Fan

There are few documented values of the energy levels of the gallium atom. The values in some series remain blank and some series have no values in high Rydberg states. In this paper, based on the weakest bound electron potential model theory we treat the many-valence electron system of the excited gallium atom as a single-electron system of the weakest bound electron and use Martin's expression to determine the parameters. Most of the results are satisfying with deviations less than 1 cm–1 compared with the documented values in the National Institute of Standards and Technology. In addition, we fill many blanks in some high Rydberg energy levels of the gallium atom. PACS Nos.: 31.15.Ct, 32.10.Fn


2021 ◽  
Vol 51 (6) ◽  
pp. 511-517
Author(s):  
Igor Leonidovich Glukhov ◽  
Aleksandr Anatolievich Kamenski ◽  
V D Ovsiannikov

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