Laser frequency stabilisation on narrow resonances of cold magnesium atoms at the 1S0 – 3P1 transition

2018 ◽  
Vol 48 (5) ◽  
pp. 410-414 ◽  
Author(s):  
A N Goncharov ◽  
A E Bonert ◽  
V I Baraulya ◽  
M A Tropnikov ◽  
S A Kuznetsov ◽  
...  
Keyword(s):  
Laser Frequency ◽  
Frequency Stabilisation

Digital implementation of a laser frequency stabilisation technique in the telecommunications band

2017 ◽  
Author(s):  
Pritesh Jivan ◽  
Adriaan van Brakel ◽  
Rodolfo Martínez Manuel ◽  
Michael Grobler
Keyword(s):  
Laser Frequency ◽  
Digital Implementation ◽  
Frequency Stabilisation

scholarly journals Diode laser frequency stabilisation for water-vapour differential absorption sensing

2006 ◽  
Vol 85 (2-3) ◽  
pp. 477-485 ◽  
Author(s):  
R. Matthey ◽  
S. Schilt ◽  
D. Werner ◽  
C. Affolderbach ◽  
L. Thévenaz ◽  
...  
Keyword(s):  
Diode Laser ◽  
Water Vapour ◽  
Laser Frequency ◽  
Differential Absorption ◽  
Frequency Stabilisation

scholarly journals Laser frequency stabilisation for space applications

2017 ◽  
Author(s):  
Linda Mondin ◽  
Alain Brillet ◽  
C. Nary Man ◽  
Jacques Berthon
Keyword(s):  
Laser Frequency ◽  
Space Applications ◽  
Frequency Stabilisation

scholarly journals Numerical 2D And 3D Simulations of a Spherical Fabry–Pérot Resonator for Application as a Reference Cavity for Laser Frequency Stabilisation

2015 ◽  
Vol 52 (3) ◽  
pp. 21-33
Author(s):  
E. Nitiss ◽  
K. Bluss ◽  
J. Alnis
Keyword(s):  
Numerical Study ◽  
Symmetry Plane ◽  
Laser Frequency ◽  
Environmental Perturbations ◽  
Frequency Stabilisation ◽  
Reference Cavity ◽  
Resonance Frequencies ◽  
Fabry Perot ◽  
Precise Simulation ◽  
2D And 3D

Abstract We report on the results of a numerical study of deformations of a spherical Fabry-Pérot cavity that can be used for laser frequency stabilisation. It is demonstrated that for a precise simulation of the cavity deformations a 3D model has to be used instead of a simpler 2D model, which employs simulation on the symmetry plane of the cavity. To lower the sensitivity to environmental perturbations, it is suggested to use a material with a low density and a high Young’s modulus. We also show that the mechanical resonance frequencies of the cavity are mainly determined by the size of the cavity.

Laser frequency stabilisation for LISA: Experimental progress

2000 ◽  
Vol 25 (6) ◽  
pp. 1137-1141 ◽  
Author(s):  
P.W. McNamara ◽  
H. Ward ◽  
J. Hough
Keyword(s):  
Laser Frequency ◽  
Frequency Stabilisation

Laser Silicon Interaction Study on Ring Oscillators to Establish Temperature Voltage Dependency Trends on 14 nm and Future FinFET Technologies

2017 ◽  
Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan
Keyword(s):  
High Speed ◽  
Laser Frequency ◽  
Ring Oscillator ◽  
Switching Speed ◽  
Dual Nature ◽  
Voltage Imaging ◽  
Multiple Cores ◽  
Speed Performance ◽  
Self Test ◽  
Frequency Changes

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.

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