Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

2018 ◽  
Vol 48 (3) ◽  
pp. 215-221
Author(s):  
P A Bokhan ◽  
K S Zhuravlev ◽  
D E Zakrevskii ◽  
T V Malin ◽  
I V Osinnykh ◽  
...  
Keyword(s):  
Optical Pumping ◽  
Amplified Luminescence ◽  
Heavily Doped

Light emission of heavily doped AlGaN structures under optical pumping

2018 ◽  
Vol 39 (4) ◽  
pp. 043002
Author(s):  
P. A. Bokhan ◽  
N. V. Fateev ◽  
I. V. Osinnykh ◽  
T. V. Malin ◽  
Dm. E. Zakrevsky ◽  
...  
Keyword(s):  
Optical Pumping ◽  
Light Emission ◽  
Heavily Doped

scholarly journals Оптическое усиление в сильнолегированных структурах Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N : Si

2019 ◽  
Vol 45 (18) ◽  
pp. 48
Author(s):  
П.А. Бохан ◽  
К.С. Журавлёв ◽  
Дм.Э. Закревский ◽  
Т.В. Малин ◽  
И.В. Осинных ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Cross Sections ◽  
Nd:Yag Laser ◽  
Room Temperature ◽  
Optical Pumping ◽  
Excitation Power ◽  
Excitation Power Density ◽  
Pulsed Nd:Yag Laser ◽  
Donor Acceptor ◽  
Heavily Doped

The gain characteristics of heavily doped AlxGa1-xN/AlN: Si structures with x = 0.65 and 0.74 under optical pumping by a pulsed Nd:YAG laser radiation with lambda= 266 nm have been experimentally studied at room temperature. The absolute values of the optical gains are (0.5–6)*10^3 сm-1 in the maximum of the luminescence spectrum at the excitation power density (8–600) kW/cm2. The obtained cross sections for the radiative and donor–acceptor recombination coincide with each other and exceed the 10^(-16) сm2.

scholarly journals Amplified luminescence in organo-curium nanocrystal hybrids

Nanoscale ◽  
2019 ◽  
Vol 11 (16) ◽  
pp. 7609-7612 ◽  
Author(s):  
Peter Agbo ◽  
Alexander Müller ◽  
Leticia Arnedo-Sanchez ◽  
Peter Ercius ◽  
Andrew M. Minor ◽  
...  
Keyword(s):  
Optical Pumping ◽  
Metal Chelator ◽  
Amplified Luminescence

Amplified luminescence of248Cm3+doped in a NaGdF4lattice is achieved through optical pumping of a surface-localized metal chelator, 3,4,3-LI(1,2-HOPO).

scholarly journals Особенности оптического усиления в сильнолегированных Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N:Si-структурах

2021 ◽  
Vol 47 (14) ◽  
pp. 39
Author(s):  
П.А. Бохан ◽  
К.С. Журавлёв ◽  
Д.Э. Закревский ◽  
Т.В. Малин ◽  
И.В. Осинных ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Optical Pumping ◽  
Optical Excitation ◽  
Stimulated Emission ◽  
Time Decay ◽  
Time Resolved ◽  
Exponential Time ◽  
Donor Acceptor ◽  
Heavily Doped

Time-resolved luminescence and stimulated emission intensities has been experimentally investigated in heavily doped Al0.65Ga0.35N and Al0.74Ga0.26N structures under pulsed optical excitation. These results showed that the time decay of the luminescence and stimulated emission intensities for various wavelengths of the emitted spectrum and optical pumping intensities consisting of at least the fast and the slow components. Fast components with exponential time decay are responsible for the radiative recombination of nonequilibrium electrons on deep acceptors, while slow ones are responsible for the recombination of donor-acceptor pairs

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Control of chemical equilibrium through optical pumping

1985 ◽  
Vol 10 (6) ◽  
pp. 883-891 ◽  
Author(s):  
M. Allegrini ◽  
G. Alzetta ◽  
P. Bicchi ◽  
S. Gozzini ◽  
L. Moi
Keyword(s):  
Chemical Equilibrium ◽  
Optical Pumping

Optical pumping and unstable nuclei

1985 ◽  
Vol 10 (6) ◽  
pp. 659-674 ◽  
Author(s):  
E.W. Otten
Keyword(s):  
Optical Pumping ◽  
Unstable Nuclei

Optical pumping in semiconductors

1985 ◽  
Vol 10 (6) ◽  
pp. 1117-1138 ◽  
Author(s):  
C. Hermann ◽  
G. Lampel ◽  
V.I. Safarov
Keyword(s):  
Optical Pumping
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