Optimised method of thermal diffusivity determination of thin films by means of laser-induced dynamic gratings

2001 ◽  
Vol 33 (5) ◽  
pp. 517-524
Author(s):  
Eugeny Ivakin ◽  
Liudmila Makarova ◽  
Alexander Rubanov
Keyword(s):  
Thin Films ◽  
Thermal Diffusivity

Photothermal methods for determination of thermal properties of bulk materials and thin films

Open Physics ◽  
2010 ◽  
Vol 8 (2) ◽  
Author(s):  
Jerzy Bodzenta ◽  
Anna Kaźmierczak-Bałata ◽  
Jacek Mazur
Keyword(s):  
Thin Films ◽  
Thermal Properties ◽  
Thermal Diffusivity ◽  
Heat Transport ◽  
Temperature Fields ◽  
Nonstationary Temperature ◽  
Measuring Techniques ◽  
Heat Transport Properties ◽  
Photothermal Methods

AbstractInformation on the thermal properties of materials is very important both in fundamental physical research and in engineering applications. The development of materials with desirable heat transport properties requires methods for their experimental determination. In this paper basic concepts of the measurement of parameters describing the heat transport in solids are discussed. Attention is paid to methods utilizing nonstationary temperature fields, especially to photothermal methods in which the temperature disturbance in the investigated sample is generated through light absorption. Exemplary photothermal measuring techniques, which can be realized using common experimental equipment, are described in detail. It is shown that using these techniques it is possible to determine the thermal diffusivity of bulk transparent samples, opaque and semi-transparent plate-form samples, and the thermal conductivity of thin films deposited on thick substrates. Results of the investigation of thermal diffusivity of the ground in the polar region, which is based on the analysis of the propagation of the thermal wave generated by sun-light, are also presented. Based on chosen examples one can state that photothermal techniques can be used for determination of the thermal properties of very different materials.

Determination of Thermal Diffusivity Coefficient of Thin Films by Thermal Square Wave Method

2011 ◽  
Vol 424 (1) ◽  
pp. 28-35 ◽  
Author(s):  
O. V. Malyshkina ◽  
A. A. Movchikova ◽  
O. N. Kalugina ◽  
A. V. Daineko
Keyword(s):  
Thin Films ◽  
Thermal Diffusivity ◽  
Diffusivity Coefficient ◽  
Wave Method ◽  
Square Wave ◽  
Thermal Diffusivity Coefficient

Scanning thermal probe microscope method for the determination of thermal diffusivity of nanocomposite thin films

2016 ◽  
Vol 87 (8) ◽  
pp. 084903 ◽  
Author(s):  
Deepak Varandani ◽  
Khushboo Agarwal ◽  
Juergen Brugger ◽  
Bodh Raj Mehta
Keyword(s):  
Thin Films ◽  
Thermal Diffusivity ◽  
Thermal Probe ◽  
Nanocomposite Thin Films ◽  
Probe Microscope

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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