Measurement of the surface tension of molten silicon by the use of ripplon

1998 ◽  
Vol 30 (1) ◽  
pp. 91-96 ◽  
Author(s):  
Nobuya Kawasaki ◽  
Kotaro Watanabe ◽  
Yuji Nagasaka
2000 ◽  
Vol 39 (Part 1, No. 12A) ◽  
pp. 6487-6492 ◽  
Author(s):  
Hideo Nakanishi ◽  
Kenichi Nakazato ◽  
Kazutaka Terashima

2006 ◽  
Vol 54 (5) ◽  
pp. 1221-1225 ◽  
Author(s):  
Hidetoshi Fujii ◽  
Taihei Matsumoto ◽  
Shun Izutani ◽  
Shoji Kiguchi ◽  
Kiyoshi Nogi

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Fathi Aqra ◽  
Ahmed Ayyad

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as and (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.


Author(s):  
Taketoshi Hibiya ◽  
Shin Nakamura ◽  
Kusuhiro Mukai ◽  
Zheng–Gang Niu ◽  
Nobuyuki Imaishi ◽  
...  

2002 ◽  
Vol 249 (2) ◽  
pp. 471-475 ◽  
Author(s):  
Zhang Fu Yuan ◽  
Kusuhiro Mukai ◽  
Wen Lai Huang

1995 ◽  
Vol 34 (Part 1, No. 2A) ◽  
pp. 414-418 ◽  
Author(s):  
Hitoshi Sasaki ◽  
Yutaka Anzai ◽  
Xinming Huang ◽  
Kazutaka Terashima ◽  
Shigeyuki Kimura

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