scholarly journals Microstructure analysis of electrospun La0.8Sr0.2MnO3 nanowires using electron microscopy and electron backscatter diffraction (EBSD)

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025008
Author(s):  
Anjela Koblischka-Veneva ◽  
Michael R. Koblischka ◽  
XianLin Zeng ◽  
Jörg Schmauch
Keyword(s):  
Electron Microscopy ◽  
Electron Backscatter Diffraction ◽  
Microstructure Analysis ◽  
Electron Backscatter ◽  
Backscatter Diffraction

Where are the geometrically necessary dislocations accommodating small imprints?

2009 ◽  
Vol 24 (3) ◽  
pp. 647-651 ◽  
Author(s):  
M. Rester ◽  
C. Motz ◽  
R. Pippan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Twin Boundary ◽  
Crystal Orientation ◽  
Electron Backscatter Diffraction ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Copper Single Crystals ◽  
Backscatter Diffraction ◽  
Small Misorientation

Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) analyses of small indentations in copper single crystals exhibit only slight changes of the crystal orientation in the surroundings of the imprints. Far-reaching dislocations might be the reason for these small misorientation changes. Using EBSD and TEM technique, this work makes an attempt to visualize the far-propagating dislocations by introducing a twin boundary in the vicinity of small indentations. Because dislocations piled up at the twin boundary produce a misorientation gradient, the otherwise far-propagating dislocations can be detected.

scholarly journals Application of Electron Backscatter Diffraction (EBSD) for Crystallographic Characterization of Aluminum-Doped Zinc Oxide Sputtered Films

2013 ◽  
Vol 19 (S4) ◽  
pp. 103-104
Author(s):  
C.B. Garcia ◽  
E. Ariza ◽  
C.J. Tavares
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electron Backscatter Diffraction ◽  
Wide Range ◽  
Electron Backscatter ◽  
Aluminum Doped Zinc Oxide ◽  
Ebsd Technique ◽  
Backscatter Diffraction

Zinc Oxide is a wide band-gap compound semiconductor that has been used in optoelectronic and photovoltaic applications due to its good electrical and optical properties. Aluminium has been an efficient n-type dopant for ZnO to produce low resistivity films and high transparency to visible light. In addition, the improvement of these properties also depends on the morphology, crystalline structure and deposition parameters. In this work, ZnO:Al films were produced by d.c. pulsed magnetron sputtering deposition from a ZnO ceramic target (2.0 wt% Al2O3) on glass substrates, at a temperature of 250 ºC.The crystallographic orientation of aluminum doped zinc oxide (ZnO:Al) thin films has been studied by Electron Backscatter Diffraction (EBSD) technique. EBSD coupled with Scanning Electron Microscopy (SEM) is a powerful tool for the microstructural and crystallographic characterization of a wide range of materials.The investigation by EBSD technique of such films presents some challenges since this analysis requires a flat and smooth surface. This is a necessary condition to avoid any shadow effects during the experiments performed with high tilting conditions (70º). This is also essential to ensure a good control of the three dimensional projection of the crystalline axes on the geometrical references related to the sample.Crystalline texture is described by the inverse pole figure (IPF) maps (Figure 1). Through EBSD analysis it was observed that the external surface of the film presents a strong texture on the basal plane orientation (grains highlighted in red colour). Furthermore it was possible to verify that the grain size strongly depends on the deposition time (Figure 1 (a) and (b)). The electrical and optical film properties improve with increasing of the grain size, which can be mainly, attributed to the decrease in scattering grain boundaries which leads to an increasing in carrier mobility (Figure 2).The authors kindly acknowledge the financial support from the Portuguese Foundation for Science and Technology (FCT) scientific program for the National Network of Electron Microscopy (RNME) EDE/1511/RME/2005.

scholarly journals Dislocation Creep of Olivine and Amphibole in Amphibole Peridotites from Åheim, Norway

Minerals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1018
Author(s):  
Sejin Jung ◽  
Takafumi Yamamoto ◽  
Jun-ichi Ando ◽  
Haemyeong Jung
Keyword(s):  
Electron Microscopy ◽  
Slip System ◽  
Electron Backscatter Diffraction ◽  
Microstructural Analysis ◽  
Dislocation Creep ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Different Types ◽  
Localized Shear Deformation ◽  
Backscatter Diffraction

Amphibole peridotite samples from Åheim, Norway, were analyzed to understand the deformation mechanism and microstructural evolution of olivine and amphibole through the Scandian Orogeny and subsequent exhumation process. Three Åheim amphibole peridotite samples were selected for detailed microstructural analysis. The Åheim amphibole peridotites exhibit porphyroclastic texture, abundant subgrain boundaries in olivine, and the evidence of localized shear deformation in the tremolite-rich layer. Two different types of olivine lattice preferred orientations (LPOs) were observed: B- and A-type LPOs. Electron backscatter diffraction (EBSD) mapping and transmission electron microscopy (TEM) observations revealed that most subgrain boundaries in olivine consist of dislocations with a (001)[100] slip system. The subgrain boundaries in olivine may have resulted from the deformation of olivine with moderate water content. In addition, TEM observations using a thickness-fringe method showed that the free dislocations of olivine with the (010)[100] slip system were dominant in the peridotites. Our data suggest that the subgrain boundaries and free dislocations in olivine represent a product of later-stage deformation associated with the exhumation process. EBSD mapping of the tremolite-rich layer revealed intracrystalline plasticity in amphibole, which can be interpreted as the activation of the (100)[001] slip system.

Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

2016 ◽  
Vol 858 ◽  
pp. 147-150 ◽  
Author(s):  
Mojmír Meduňa ◽  
Thomas Kreiliger ◽  
Ivan Prieto ◽  
Marco Mauceri ◽  
Marco Puglisi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Backscatter Diffraction ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Fault Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Backscatter ◽  
Backscatter Diffraction

The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si (001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction. A significant reduction of SF density with respect to planar material was observed for the {111} planes parallel to the ridges. The highest SF density was found in the (-1-11) plane. A previously observed defect was identified as twins by electron backscatter diffraction.

scholarly journals Texture and Microtexture of Pure (6N) and Commercially Pure Aluminum after Deformation by Extrusion with Forward-Backward Rotating Die (Kobo)

2016 ◽  
Vol 61 (1) ◽  
pp. 461-468 ◽  
Author(s):  
M. Bieda ◽  
S. Boczkal ◽  
P. Koprowski ◽  
K. Sztwiertnia ◽  
K. Pieła
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Electron Backscatter Diffraction ◽  
Pure Aluminum ◽  
Pure Aluminium ◽  
Commercially Pure ◽  
Transmission Electron ◽  
Electron Backscatter ◽  
Backscatter Diffraction ◽  
Crystallographic Orientations

Pure aluminium (6N) and commercially pure aluminium (99.7) was deformed by KOBO method. Microstructure and texture of both materials after deformation was analyzed by means of scanning and transmission electron microscopy. Advanced methods of crystallographic orientations measurements like Electron Backscatter Diffraction - EBSD (SEM) and microdiffraction (TEM) was used. Grain size distribution and misorientation between grains in cross and longitudinal sections of the samples were analyzed. Differences in size and homogeneity of the grains were observed in both materials. Pure aluminium was characterized by larger grain size in both sections of extruded material. Whereas commercially pure aluminium reveals smaller grain size and more homogeneous and stable microstructure.

Structure of Intermetallic Al–Si Coating on Inconel 617

2014 ◽  
Vol 782 ◽  
pp. 594-597
Author(s):  
Agnieszka Kochmańska ◽  
Paweł Kochmański
Keyword(s):  
Electron Microscopy ◽  
Electron Backscatter Diffraction ◽  
Nickel Superalloy ◽  
Argon Atmosphere ◽  
Aluminide Coatings ◽  
Electron Backscatter ◽  
Inconel 617 ◽  
Slurry Method ◽  
Backscatter Diffraction ◽  
Scanning Electron

Nickel superalloy was coated by aluminide coatings by the slurry method. The slurry as active mixture containing aluminium and silicon powders, an activator and a binder. The coating were obtained by annealed in argon atmosphere. The structure of these coatings is two zonal and depends on time and temperature of producing. The phase composition was determined using following techniques: scanning electron microscopy (SEM) equipped with Xray microanalysis (EDS) combined with electron backscatter diffraction (EBSD) and Xray diffraction (XRD).

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