scholarly journals Thickness dependence of spin torque effect in Fe/MgO/Fe magnetic tunnel junction: Implementation of divide-and-conquer with first-principles calculation

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015036
Author(s):  
Bao-Huei Huang ◽  
Chia-Chia Chao ◽  
Yu-Hui Tang
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
Thickness Dependence ◽  
Divide And Conquer ◽  
First Principles Calculation ◽  
Spin Torque

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
G. D. Demin ◽  
K. A. Zvezdin ◽  
A. F. Popkov
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Nonuniform Heating ◽  
Spin Torque ◽  
Rectification Effect ◽  
Wide Range ◽  
Spin Polarized ◽  
Potential Applications ◽  
Dynamic Components ◽  
Bolometric Effect

Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (MTJ) in the presence of a thermal gradient through a tunnel junction are discussed. Theoretical estimates of the static and dynamic components of the microwave sensitivity of the spin-torque diode, related to thermoelectric tunnel magneto-Seebeck effect and the thermal transfer of spin angular momentum in the MTJ under nonuniform heating, are presented. Despite the fact that the thermal contribution to the microwave sensitivity of the spin-torque diode is found to be relatively small in relation to the rectification effect related to the modulation of the MTJ resistance by a microwave spin-polarized current, nevertheless, the considered bolometric effect can be successfully utilized in some real-world microwave applications.

High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study

2017 ◽  
Vol 53 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Jiaqi Zhou ◽  
Weisheng Zhao ◽  
Shouzhong Peng ◽  
Junfeng Qiao ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
First Principles ◽  
Magnetic Tunnel Junction ◽  
High Tunnel ◽  
Tunnel Magnetoresistance ◽  
First Principles Study

Influence of dynamical dipolar coupling on spin-torque-induced excitations in a magnetic tunnel junction nanopillar

2012 ◽  
Vol 111 (7) ◽  
pp. 07C906 ◽  
Author(s):  
Kiwamu Kudo ◽  
Tazumi Nagasawa ◽  
Hirofumi Suto ◽  
Tao Yang ◽  
Koichi Mizushima ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Dipolar Coupling ◽  
Magnetic Tunnel Junction ◽  
Spin Torque

scholarly journals Time-domain stability of parametric synchronization in a spin-torque nano-oscillator based on a magnetic tunnel junction

2017 ◽  
Vol 96 (2) ◽  
Author(s):  
Raghav Sharma ◽  
Naveen Sisodia ◽  
Philipp Dürrenfeld ◽  
Johan Åkerman ◽  
Pranaba Kishor Muduli
Keyword(s):  
Time Domain ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Torque ◽  
Parametric Synchronization ◽  
Domain Stability

scholarly journals A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hyein Lim ◽  
Sora Ahn ◽  
Miryeon Kim ◽  
Seungjun Lee ◽  
Hyungsoon Shin
Keyword(s):  
Tunnel Junction ◽  
Giant Magnetoresistance ◽  
New Technology ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Mean Oscillation ◽  
Proposed Model ◽  
Level Model

Spin-torque oscillator (STO) is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR) STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ)-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.

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