scholarly journals Erratum: “Indirect light absorption model for highly strained silicon infrared sensors” [J. Appl. Phys. 130, 055105 (2021)]

2021 ◽  
Vol 130 (20) ◽  
pp. 209901
Author(s):  
Nicolas Roisin ◽  
Guillaume Brunin ◽  
Gian-Marco Rignanese ◽  
Denis Flandre ◽  
Jean-Pierre Raskin
Keyword(s):  
Light Absorption ◽  
Strained Silicon ◽  
Absorption Model ◽  
Infrared Sensors ◽  
Highly Strained

scholarly journals Indirect light absorption model for highly strained silicon infrared sensors

2021 ◽  
Vol 130 (5) ◽  
pp. 055105
Author(s):  
Nicolas Roisin ◽  
Guillaume Brunin ◽  
Gian-Marco Rignanese ◽  
Denis Flandre ◽  
Jean-Pierre Raskin
Keyword(s):  
Light Absorption ◽  
Strained Silicon ◽  
Absorption Model ◽  
Infrared Sensors ◽  
Highly Strained

Highly Strained Silicon on Polymer Obtained By Temporary Polymer Wafer Bonding

2020 ◽  
Vol MA2020-02 (22) ◽  
pp. 1618-1618
Author(s):  
Laurent Gaëtan Michaud ◽  
Clément Castan ◽  
Pierre Montméat ◽  
Edy Azrak ◽  
Nikita Nikitskiy ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Strained Silicon ◽  
Highly Strained

Highly-Strained Silicon-On-Insulator Development

2019 ◽  
Vol 3 (6) ◽  
pp. 107-117 ◽  
Author(s):  
Takeshi Akatsu ◽  
Jean-Michel Hartmann ◽  
Cécile Aulnette ◽  
Yves-Matthieu Le Vaillant ◽  
Denis Rouchon ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Strained Silicon ◽  
Highly Strained

scholarly journals Plant canopy light absorption model with application to wheat

1978 ◽  
Vol 17 (16) ◽  
pp. 2629 ◽  
Author(s):  
J. E. Chance ◽  
E. W. LeMaster
Keyword(s):  
Light Absorption ◽  
Plant Canopy ◽  
Absorption Model

scholarly journals Phosphorus Donors in Highly Strained Silicon

2006 ◽  
Vol 97 (16) ◽  
Author(s):  
Hans Huebl ◽  
Andre R. Stegner ◽  
Martin Stutzmann ◽  
Martin S. Brandt ◽  
Guenther Vogg ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Highly Strained

Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes

2008 ◽  
Vol 29 (5) ◽  
pp. 468-470 ◽  
Author(s):  
Osama M. Nayfeh ◽  
CÁit NÍ ChlÉirighChleirigh ◽  
Judy L. Hoyt ◽  
Dimitri A. Antoniadis
Keyword(s):  
Silicon Germanium ◽  
Strained Silicon ◽  
Band To Band Tunneling ◽  
Highly Strained

Non-linear Raman shift-stress behavior in top-down fabricated highly strained silicon nanowires

2020 ◽  
Vol 128 (4) ◽  
pp. 045704
Author(s):  
L. B. Spejo ◽  
J. L. Arrieta-Concha ◽  
M. V. Puydinger dos Santos ◽  
A. D. Barros ◽  
K. K. Bourdelle ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Raman Shift ◽  
Strained Silicon ◽  
Top Down ◽  
Stress Behavior ◽  
Non Linear ◽  
Highly Strained

scholarly journals Characterization of the tunable response of highly strained compliant optical metamaterials

2011 ◽  
Vol 369 (1950) ◽  
pp. 3447-3455 ◽  
Author(s):  
Imogen M. Pryce ◽  
Koray Aydin ◽  
Yousif A. Kelaita ◽  
Ryan M. Briggs ◽  
Harry A. Atwater
Keyword(s):  
Local Strain ◽  
Elastic Response ◽  
Absorption Feature ◽  
Infrared Sensors ◽  
Additional Degree ◽  
Optical Metamaterials ◽  
Vibration Absorption ◽  
Compliant Substrates ◽  
Deformation Limit ◽  
Highly Strained

Metamaterial designs are typically limited to a narrow operating bandwidth that is predetermined by the fabricated dimensions. Various approaches have previously been used to introduce post-fabrication tunability and thus enable active metamaterials. In this work, we exploit the mechanical deformability of a highly compliant polymeric substrate to achieve dynamic, tunable resonant frequency shifts greater than a resonant linewidth. We investigate the effect of metamaterial shape on the plastic deformation limit of resonators. We find that, for designs in which the local strain is evenly distributed, the response is elastic under larger global tensile strains. The plastic and elastic limits of resonator deformation are explored and the results indicate that, once deformed, the resonators operate within a new envelope of elastic response. We also demonstrate the use of coupled resonator systems to add an additional degree of freedom to the frequency tunability and show that compliant substrates can be used as a tool to test coupling strength. Finally, we illustrate how compliant metamaterials could be used as infrared sensors, and show enhancement of an infrared vibration absorption feature by a factor of 225.

Highly Strained Silicon Nitride Thin Film Deposited by PECVD with Double Frequencies in Strained Silicon Technologies

2014 ◽  
Vol 936 ◽  
pp. 255-258 ◽  
Author(s):  
Bin Shu ◽  
Jing Ming Chen ◽  
He Ming Zhang ◽  
Feng Zhu ◽  
Pu Li Quan ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Tensile Stress ◽  
Process Parameters ◽  
High Stress ◽  
Strained Silicon ◽  
Highly Strained

The mechanism of high stress in silicon nitride thin film is studied systematically in this paper. The effects of the various process parameters on the stress in silicon nitride thin film deposited by PECVD are analyzed and discussed. The silicon nitride thin film with high compressive and tensile stress has been deposited on the optimized process parameters and the compressive and tensile stress are up to-1.38GPa and 866MPa, respectively. Finally, the method of further improving the stress in silicon nitride thin film is presented.

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