A prototype thermoelectric module based on p-type colusite together with n-type nanostructured PbTe for power generation

2022 ◽  
Vol 120 (1) ◽  
pp. 013501
Author(s):  
Raju Chetty ◽  
Priyanka Jood ◽  
Masayuki Murata ◽  
Koichiro Suekuni ◽  
Michihiro Ohta
Keyword(s):  
Power Generation ◽  
Thermoelectric Module ◽  
P Type

Effects of High Figure of Merit Bi2Te3 Based Superlattices on Thermoelectric Power Generation

2008 ◽  
Author(s):  
Christopher A. Howells ◽  
Cynthia Watkins ◽  
Rama Venkatasubramanian
Keyword(s):  
Power Generation ◽  
Figure Of Merit ◽  
Thermoelectric Module ◽  
Internal Resistance ◽  
Absolute Temperature ◽  
Electrical Measurements ◽  
Standard Pressure ◽  
High Figure ◽  
Resistive Loads ◽  
P Type

We have investigated the power generation characteristics of thermoelectric devices made from high Figure of Merit p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2.7Se0.3 superlattice materials. The Figure of Merit, ZT (where Z is a measure of the material’s thermoelectric properties and T is the absolute temperature) of the p-type and n-type superlattices were each measured at 300K and found to be 2.4 and 1.2 respectively [1]. Sixteen p-n couples were developed using these superlattice materials and they were configured into a 4×4 thermoelectric module. The electrical measurements (Current, Voltage, and Power) of the 4×4 superlattice thermoelectric modules under various resistive loads and temperature differentials in a standard pressure environment are presented and from these, we have determined the peak power and internal resistance of the module. We also discuss other opportunities to further investigate this device as well as its suitability for power applications.

Performance of Nanoscale Quantum Well Thermoelectrics

2007 ◽  
Author(s):  
Daniel Krommenhoek ◽  
Norbert Elsner ◽  
Saeid Ghamaty ◽  
Velimir Jovanovic
Keyword(s):  
Thermal Conductivity ◽  
Power Generation ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Thermoelectric Module ◽  
Conductivity Data ◽  
Resistivity Data ◽  
P Type ◽  
Bulk Thermal Conductivity

Alternating 10 nm thermoelectric films of N-type Si/SiGe and P-type Si/SiGe and B4C/B9C have been fabricated on various substrates, electrically joined and thermoelectric properties measured from 40°K up to 700°K. These nanoscale thermoelectric films demonstrate excellent thermoelectric power factors significantly higher than current bulk thermoelectric materials. The implications of the measured thermoelectric Seebeck coefficient data and electrical resistivity data for alternating 10 nm films that are grown to thicknesses of one to 10 microns means efficiencies of 15% at 200°C temperature differences and efficiencies of 30% at 400°C temperature differences. Utilizing Seebeck and resistivity data obtained by Hi-Z and UCSD, along with published bulk thermal conductivity data, which is conservative, unique thermoelectric module and generator concept designs for both power generation and cooling are presented over wide temperature and power ranges.

A High Seebeck Voltage Thermoelectric Module with P‐type and N‐type MAPbI 3 Perovskite Single Crystals

2021 ◽  
pp. 2001003
Author(s):  
Zuoxiang Xie ◽  
Kai Feng ◽  
Yan Xiong ◽  
Xu Chen ◽  
Yudong Liang ◽  
...  
Keyword(s):  
Single Crystals ◽  
Thermoelectric Module ◽  
P Type ◽  
Seebeck Voltage

scholarly journals Performance calculations of thermoelectric module p-type leg composed of (Bi2Te3)x(Sb2Te3)1-x

2016 ◽  
Vol 10 ◽  
pp. 00062
Author(s):  
Michał Musiał ◽  
Marcin Borcuch ◽  
Krzysztof Wojciechowski
Keyword(s):  
Thermoelectric Module ◽  
P Type

Realizing high-efficiency power generation in low-cost PbS-based thermoelectric materials

2020 ◽  
Vol 13 (2) ◽  
pp. 579-591 ◽  
Author(s):  
Binbin Jiang ◽  
Xixi Liu ◽  
Qi Wang ◽  
Juan Cui ◽  
Baohai Jia ◽  
...  
Keyword(s):  
Power Generation ◽  
Conversion Efficiency ◽  
Thermoelectric Materials ◽  
High Efficiency ◽  
Low Cost ◽  
Thermoelectric Module ◽  
High Conversion ◽  
High Conversion Efficiency

A high conversion efficiency of 11.2% was realized in a low-cost PbS-based segmented thermoelectric module.

Power generation performance of π-structure thermoelectric device using NaCo2O4 and Mg2Si elements

2013 ◽  
Vol 1490 ◽  
pp. 185-190 ◽  
Author(s):  
Tomoyuki Nakamura ◽  
Kazuya Hatakeyama ◽  
Masahiro Minowa ◽  
Youhiko Mito ◽  
Koya Arai ◽  
...  
Keyword(s):  
Power Generation ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Waste Heat ◽  
Maximum Output Power ◽  
Magnesium Silicide ◽  
Thermoelectric Device ◽  
Maximum Output ◽  
Thermoelectric Power Generation ◽  
P Type

ABSTRACTThermoelectric power generation has been attracting attention as a technology for waste heat utilization in which thermal energy is directly converted into electric energy. It is well known that layered cobalt oxide compounds such as NaCo2O4 and Ca3Co4O9 have high thermoelectric properties in p-type oxide semiconductors. However, in most cases, the thermoelectric properties in n-type oxide materials are not as high. Therefore, n-type magnesium silicide (Mg2Si) has been studied as an alternative due to its non-toxicity, environmental friendliness, lightweight property, and comparative abundance compared with other TE systems. In this study, we fabricated π-structure thermoelectric power generation devices using p-type NaCo2O4 elements and n-type Mg2Si elements. The p- and n-type sintering bodies were fabricated by spark plasma sintering (SPS). To reduce the resistance at the interface between elements and electrodes, we processed the surface of the elements before fabricating the devices. The end face of a Mg2Si element was covered with Ni by SPS and that of a NaCo2O4 element was coated with Ag by silver paste and soldering.The thermoelectric device consisted of 18 pairs of p-type and n-type legs connected with Ag electrodes. The cross-sectional and thickness dimensions of the p-type elements were 3.0 mm × 5.0 mm × 7.6 mm (t) and those of the n-type elements were 3.0 mm × 3.0 mm × 7.6 mm (t). The open circuit voltage was 1.9 V and the maximum output power was 1.4 W at a heat source temperature of 873 K and a cooling water temperature of 283 K in air.

Effect of Plating Layers on the Bonding Strength of p-Type Bi–Te Thermoelectric Elements

2021 ◽  
Vol 21 (8) ◽  
pp. 4503-4507
Author(s):  
Seong Min Yun ◽  
Injoon Son ◽  
Sung Hwa Bae
Keyword(s):  
Bonding Strength ◽  
Thermoelectric Module ◽  
Interface Layer ◽  
Ceramic Substrates ◽  
In Series ◽  
Cu Substrates ◽  
Solder Reaction ◽  
P Type ◽  
Substrate Defects ◽  
Solder Layer

In thermoelectric modules, multiple n-type and p-type thermoelectric elements are electrically connected in series on a Cu electrode that is bonded to a ceramic substrate. Defects in the bond between the thermoelectric elements and the Cu electrode could impact the performance of the entire thermoelectric module. This study investigated the effect of plating layers on the bonding strength of p-type Bi–Te thermoelectric elements. Ni and Pd electroplating was applied to Bi–Te thermoelectric elements; further, electroless Ni–P immersion gold (ENIG) plating was applied to Cu electrodes bonded to ceramic substrates. Forming a Pd/Ni electroplating layer on the surface of thermoelectric elements and an ENIG plating layer on the surface of the Cu electrode improved the bonding strength by approximately 3.5 times. When the Pd/Ni and ENIG plating layers were formed on Bi–Te elements and Cu substrates, respectively, the solderability greatly increased; as the solderability increased, the thickness of the diffusion layer formed with the solder layer increased. The improved bonding strength of the Pd/Ni plated thermoelectric element bonded on the ENIG plated substrate is attributed to the enhanced solderability due to the rapid inter-diffusion of Pd and Au into the solder layer and the formation of a stable and non-defected solder reaction interface layer.

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