scholarly journals Amorphous Hf–O–Te as a selector via a modified conduction mechanism by Te content control

APL Materials ◽  
2022 ◽  
Vol 10 (1) ◽  
pp. 011106
Author(s):  
Shogo Hatayama ◽  
Yuta Saito ◽  
Noriyuki Uchida
Keyword(s):  
Conduction Mechanism

AC conductivity and conduction mechanism study of rubidium gadolinium diphosphate compound

2018 ◽  
Vol 93 (5) ◽  
pp. 603-610 ◽  
Author(s):  
Samia Mathlouthi ◽  
Abderrazek Oueslati ◽  
Bassem Louati
Keyword(s):  
Ac Conductivity ◽  
Conduction Mechanism ◽  
Mechanism Study

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices

2021 ◽  
Vol 32 (18) ◽  
pp. 23232-23245
Author(s):  
Ishpal Rawal ◽  
Vipin Kumar ◽  
Vinod Kumar ◽  
Prikshit Gautam ◽  
Vijay Kumar Sharma
Keyword(s):  
Conduction Mechanism

Variable Temperature Measurement on Operating Pentacene-Based OTFT

2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy
Keyword(s):  
Conduction Mechanism ◽  
Variable Temperature ◽  
Electrical Measurement ◽  
Isokinetic Temperature ◽  
Trap States ◽  
Band Tail ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
Higher Temperature ◽  
Release Model

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.

Sign in / Sign up

Export Citation Format

Share Document