scholarly journals Temperature frequency stability study of extensional mode N-doped silicon MEMS resonator

AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015319
Author(s):  
Hasnet Ahmed ◽  
Payman Rajai ◽  
Mohammed Jalal Ahamed
Keyword(s):  
Frequency Stability ◽  
Stability Study ◽  
Mems Resonator ◽  
Doped Silicon

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

Frequency Stability Study in Electrical Power System with SMES and TCSC units

2021 ◽  
Author(s):  
Amiya Kumar Naik ◽  
Narendra Kumar Jena ◽  
Subhadra Sahoo ◽  
Binod Kumar Sahu
Keyword(s):  
Power System ◽  
Electrical Power ◽  
Frequency Stability ◽  
Stability Study ◽  
Electrical Power System

scholarly journals Vertical MEMS Resonators for Real-Time Clock Applications

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
A. Pomarico ◽  
A. Morea ◽  
P. Flora ◽  
G. Roselli ◽  
E. Lasalandra
Keyword(s):  
Real Time ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Frequency Stability ◽  
Equivalent Resistance ◽  
Real Time Clock ◽  
Mems Resonator ◽  
Mems Resonators ◽  
Frequency Tunable

MEMS resonators are today widely investigated as a desirable alternative to quartz resonators in real-time clock applications, because of their low-cost, integration capability properties. Nevertheless, MEMS resonators performances are still not competitive, especially in terms of frequency stability and device equivalent resistance (and, then, power consumption). We propose a new structure for a MEMS resonator, with a vertical-like transduction mechanism, which exhibits promising features. The vertical resonator can be fabricated with the low-cost, high performance THELMA technology, and it is designed to be efficiently frequency tunable. With respect to the commonly investigated lateral resonators, it is expected to have lower equivalent resistances and improved large-scale repeatability characteristics.

3D-encapsulated VHF MEMS resonator with high frequency stability and low vibration sensitivity

2019 ◽  
Vol 286 ◽  
pp. 123-132 ◽  
Author(s):  
Zeji Chen ◽  
Fengxiang Wang ◽  
Quan Yuan ◽  
Xiao Kan ◽  
Jinling Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Stability ◽  
Vibration Sensitivity ◽  
Mems Resonator

scholarly journals SIMULATION OF THE NORMAL AND EMERGENCY OPERATION OF INTERCONNECTED POWER SYSTEM OF UKRAINE FOR FREQUENCY STABILITY STUDY

2017 ◽  
Vol 2017 (2) ◽  
pp. 57-60
Author(s):  
O.V. Kyrylenko ◽  
◽  
V.V. Pavlovsky ◽  
А.О. Steliuk ◽  
O.V. Lenga ◽  
...  
Keyword(s):  
Power System ◽  
Emergency Operation ◽  
Frequency Stability ◽  
Stability Study ◽  
Interconnected Power System

Frequency Stability of 3D Encapsulated VHF MEMS Resonator

2018 ◽  
Author(s):  
Fengxiang Wang ◽  
Quan Yuan ◽  
Xiao Kan ◽  
Zeji Chen ◽  
Jinling Yang ◽  
...  
Keyword(s):  
Frequency Stability ◽  
Mems Resonator

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Sign in / Sign up

Export Citation Format

Share Document