scholarly journals Modified Stoney formula for determining stress within thin films on large-deformation isotropic circular plates

AIP Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 125009
Author(s):  
Haijun Liu ◽  
Minghui Dai ◽  
Xiaoqing Tian ◽  
Shan Chen ◽  
Fangfang Dong ◽  
...  
Keyword(s):  
Thin Films ◽  
Large Deformation ◽  
Circular Plates ◽  
Stoney Formula

Extension of the Stoney formula for the incremental stress of thin films

2021 ◽  
Vol 118 (9) ◽  
pp. 091604
Author(s):  
Jun Qiang ◽  
Bingyan Jiang ◽  
Yanzhuo Dong ◽  
Benedikt Roth ◽  
Fengze Jiang
Keyword(s):  
Thin Films ◽  
Stoney Formula

scholarly journals Combined elastic strain and macroscopic stress characterization in polycrystalline Cu thin films

2006 ◽  
Vol 21 (1) ◽  
pp. 25-29 ◽  
Author(s):  
E. Eiper ◽  
K. J. Martinschitz ◽  
J. Keckes
Keyword(s):  
Thin Films ◽  
Simple Approach ◽  
Synchrotron Source ◽  
Rocking Curve ◽  
X Ray ◽  
Macroscopic Stress ◽  
Substrate Curvature ◽  
Stoney Formula ◽  
Elastic Strains

This work introduces a new simple approach to determine experimental X-ray elastic constants (XECs) of thin films by coupling the sin2ψ method and the substrate curvature technique. The approach is demonstrated on polycrystalline Cu thin films with the thickness 200, 800, and 2400 nm deposited on Si(100) substrates. Applying synchrotron radiation, the elastic strains in the films are determined using sin2ψ method while the macroscopic stresses are assessed by measuring the substrate curvature. The stresses are calculated using the Stoney formula from the radius of substrate curvature determined by the rocking curve measurement of substrate 400 reflection at different sample positions. Results show that the magnitude of the macroscopic stress in the films is proportional to the magnitude of the slope in the sin2ψ plots. On the basis of this observation, XECs of the films were calculated showing no dependence on the film thickness. The characterization of the samples was performed at the synchrotron source Hasylab.

Large deformation of thin films and layered flat panels: effects of gravity

2001 ◽  
Vol 49 (18) ◽  
pp. 3671-3688 ◽  
Author(s):  
A.E Giannakopoulos ◽  
I.A Blech ◽  
S Suresh
Keyword(s):  
Thin Films ◽  
Large Deformation

Empirical Modelling for Prediction of Large Deformation of Clamped Circular Plates in Gas Detonation Forming Process

2016 ◽  
Vol 40 (6) ◽  
pp. 1485-1494 ◽  
Author(s):  
H. Babaei ◽  
T. Mirzababaie Mostofi ◽  
M. Alitavoli ◽  
A. Darvizeh
Keyword(s):  
Large Deformation ◽  
Circular Plates ◽  
Forming Process ◽  
Gas Detonation ◽  
Empirical Modelling

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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