scholarly journals Band-edge emission enhancement in sputtered ZnO thin films with ultraviolet surface lattice resonances

2021 ◽  
Vol 130 (22) ◽  
pp. 223103
Author(s):  
Thomas Simon ◽  
Sergei Kostcheev ◽  
Anna Rumyantseva ◽  
Jérémie Béal ◽  
Davy Gérard ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Surface Lattice ◽  
Emission Enhancement

Enhanced near-band-edge emission from a-plane ZnO thin films on SrTiO3 substrates

2015 ◽  
Vol 121 (1) ◽  
pp. 17-21 ◽  
Author(s):  
Guangheng Wu ◽  
Xiang Li ◽  
Meifeng Liu ◽  
Zhibo. Yan ◽  
Jun-Ming Liu
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission

scholarly journals Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

2017 ◽  
Vol 7 (8) ◽  
pp. 3041 ◽  
Author(s):  
C. L. Heng ◽  
W. Xiang ◽  
W. Y. Su ◽  
H. C. Wu ◽  
Y. K. Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
High Temperature Annealing ◽  
Edge Emission ◽  
Doped Zno ◽  
Co Doped

Blueshift of near band edge emission in Mg doped ZnO thin films and aging

2004 ◽  
Vol 95 (9) ◽  
pp. 4772-4776 ◽  
Author(s):  
F. K. Shan ◽  
B. I. Kim ◽  
G. X. Liu ◽  
Z. F. Liu ◽  
J. Y. Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Doped Zno ◽  
Mg Doped

scholarly journals Non-monotonous size-dependent photoluminescence and excitonic relaxations in nanostructured ZnO thin films

RSC Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 2180-2188 ◽  
Author(s):  
Ashish C. Gandhi ◽  
Ching-Hao Liao ◽  
Wei-Li Yeh ◽  
Yue-Lin Huang
Keyword(s):  
Thin Films ◽  
Green Emission ◽  
Band Edge ◽  
Dead Layer ◽  
Zno Thin Films ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Size Dependent

To comprehensively understand the behaviors of the near-band-edge emission and green emission (NBE, GE), the volume-weighting (VW) model is adapted to take into account a dead layer of confined excitons.

NH3 Doping in MOCVD Growth of ZnO Thin Films

2008 ◽  
Vol 1109 ◽  
Author(s):  
Tahir Zaidi ◽  
Muhammad Jamil ◽  
Andrew Melton ◽  
Nola Li ◽  
William E. Fenwick ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Chemical Vapor ◽  
Band Edge ◽  
Zno Thin Films ◽  
Organic Chemical ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Mocvd Growth ◽  
Torr Pressure

AbstractIn this paper effects of NH3 doping on ZnO thin films grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates using diethyl zinc (DEZn) and O2 precursors and N2 as the carrier gas have been studied. NH3 flow rates were varied from 0.1% to 4% in the growth runs. All the runs were done at 500°C at 10 Torr pressure.The XRD measurements show a single ZnO (002) peak. Raman data for the samples confirms presence of ZnO:N modes at 275cm−1, 510cm−1 and 575 cm−1 and 645cm−1. The PL results for Zn rich films show weak broad peaks centered at 480nm and 650nm with no ZnO band edge emission, while oxygen rich films show weak ZnO band edge emission and a strong broad orange peak centered at 650nm. Hall effect measurements indicate that all of the as-grown films are highly resistive. Some are weakly p-type with carrier concentration of 4.24 × 1014 cm−3 and mobility of 16.55 cm2/Vs. Annealing in N2 ambient for 60 minutes at 800°C enhances the PL band edge emission and converts all the films to highly conducting n-type, with carrier concentration on the order of 8 × 1018 cm−3, mobility on the order of 12 cm2/Vs and resistivity of 0.063 Ω-cm.

Structural, optical and magnetic properties of highly oriented transition metal (Mn/Co/Ni/Cu) doped ZnO thin films prepared by PLD

2012 ◽  
Vol 1454 ◽  
pp. 239-244 ◽  
Author(s):  
Arun Aravind ◽  
M.K. Jayaraj ◽  
Mukesh Kumar ◽  
Ramesh Chandra
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Room Temperature Ferromagnetism ◽  
Visible Region ◽  
Band Edge ◽  
Zno Films ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Axis Orientation ◽  
Doped Zno

ABSTRACTZnO doped with transition metal (TM) thin films were grown by pulsed laser deposition. XRD pattern reveals that all the ZnTMO films have c-axis orientation normal to the substrate. The reciprocal space mapping shows that the crystallinity of ZnTMO film deteriorates at higher doping of TM. All the TM doped ZnO films have transmittance greater than 75% in the visible region. The band gap of the ZnTMO thin films shows red shift on doping with Ni and Cu where as blue shift is observed for Co and Mn which increases with TM concentration. The copper doped ZnO thin film shows green PL emission at 542 nm along with the band edge emission at 385 nm. But other TM doping shows only band edge emission (385nm) and its intensity decreases at higher doping percentage. The presence of non-polar E2high and E2lowRaman modes in thin films indicates that ‘TM’ doping do not alter the wurtzite structure of ZnO. The magnetic studies of the TM doped ZnO shows room temperature ferromagnetism

Enhanced near-band edge emission in pulsed laser deposited ZnO/c-sapphire nanocrystalline thin films

2019 ◽  
Vol 125 (3) ◽  
Author(s):  
Veeresh Kumar ◽  
Himanshu Sharma ◽  
Shushant Kumar Singh ◽  
Shalendra Kumar ◽  
Ankush Vij
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Nanocrystalline Thin Films
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