Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier

2021 ◽  
Vol 119 (26) ◽  
pp. 262905
Author(s):  
Minki Kim ◽  
Youngin Goh ◽  
Junghyeon Hwang ◽  
Sanghun Jeon
Keyword(s):  
Diffusion Barrier ◽  
Bottom Electrode ◽  
Metal Nitride

scholarly journals Investigation of Top/Bottom Electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

2008 ◽  
Vol 367 (1) ◽  
pp. 201-213 ◽  
Author(s):  
C. C. Hindrichsen ◽  
T. Pedersen ◽  
E. V. Thomsen ◽  
K. Hansen ◽  
R. Lou-Møller
Keyword(s):  
Thick Film ◽  
Barrier Layer ◽  
Diffusion Barrier ◽  
Bottom Electrode ◽  
Mems Sensors ◽  
Diffusion Barrier Layer ◽  
And Diffusion ◽  
Pzt Thick Film

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Atomistic Simulation Study of Controlled Nanostructure Patterning

2003 ◽  
Vol 775 ◽  
Author(s):  
Byeongchan Lee ◽  
Kyeongjae Cho
Keyword(s):  
Diffusion Barrier ◽  
Atomistic Simulation ◽  
Degrees Of Freedom ◽  
Embedded Atom Method ◽  
Surface Kinetics ◽  
Bulk Properties ◽  
Embedded Atom ◽  
Kinetics Of ◽  
Dissociation Barrier ◽  
Strain Dependent

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.

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