Highly transparent Cu2O absorbing layer for thin film solar cells

2021 ◽  
Vol 119 (24) ◽  
pp. 242102
Author(s):  
Soichiro Shibasaki ◽  
Yuya Honishi ◽  
Naoyuki Nakagawa ◽  
Mutsuki Yamazaki ◽  
Yukitami Mizuno ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Absorbing Layer

1.6 MeV Electron Irradiation on the Characteristics of CdTe Thin Film Solar Cells

2011 ◽  
Vol 343-344 ◽  
pp. 181-187
Author(s):  
Ming Yue Fang ◽  
Jing Quan Zhang ◽  
Liang Huan Feng ◽  
Li Li Wu ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electron Irradiation ◽  
Carrier Transport ◽  
High Energy ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Before And After ◽  
Absorbing Layer ◽  
Recombination Current

The CdTe thin film solar cells with the structure of ITO/ZnO/CdS/CdTe/Au were irradiated by 1.6MeV high-energy electrons with the fluences from 5×1013/cm2 to 1×1016/cm2. The characteristics of devices before and after irradiation were studied using dark current-voltage (I-V), capacitance-voltage (C-V) and admittance spectroscopy (AS) measurements in the temperature range from 303K to 353K. The results are shown that the diode ideal factor and dark saturation current for irradiated devices first decrease and then increase significantly with fluences from 5×1013/cm2 to 1×1016/cm2, meantime the effective carrier concentration at room temperature of CdTe absorbing layer increases first and then decreases. The carrier transport mechanisms in CdTe solar cells are analyzed before and after irradiation. The non-irradiated devices and irradiated devices with fluences less than 5×1014/cm2 are dominated by the recombination current of electron-hole pairs in the depletion layer. However, it is dominated by the recombination current of tunneling at the interface after the irradiation of higher fluences. The changes of types and amount of defects caused by electron irradiation are the major reasons for the above mentioned variations.

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

2020 ◽  
Vol 17 (4) ◽  
pp. 527-533
Author(s):  
Mohsen Sajadnia ◽  
Sajjad Dehghani ◽  
Zahra Noraeepoor ◽  
Mohammad Hossein Sheikhi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Trap Density ◽  
Thin Film Solar Cells ◽  
Content Type ◽  
Cigs Thin Film ◽  
Absorbing Layer ◽  
Cigs Solar Cells

Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

Thin film solar cells with graded-bandgap photon-absorbing layer

2021 ◽  
pp. 239-264
Author(s):  
Faiz Ahmad ◽  
Akhlesh Lakhtakia ◽  
Peter B. Monk
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Absorbing Layer ◽  
Graded Bandgap

Environment-friendly Cu-based Compounds Thin Film Solar Cells: Materials, Devices and Charge Carrier Dynamics

2021 ◽  
Author(s):  
Chengcheng Xing ◽  
Yan Lei ◽  
Manying Liu ◽  
Si-Xin Wu ◽  
Weiwei He ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Charge Carrier ◽  
Raw Materials ◽  
Carrier Dynamics ◽  
Thin Film Solar Cells ◽  
Environment Friendly ◽  
Charge Carrier Dynamics ◽  
Absorbing Layer ◽  
New Generation

Cu-based compounds thin film is an ideal absorbing layer material for new generation thin film solar cells, which has many advantages, such as environment- friendly components, abundant raw materials, low...

Quantifying Trap-assisted Recombination in Thin Film Solar Cells from Intensity Dependent Photocurrent Measurements

2019 ◽  
Author(s):  
Stefan Zeiske ◽  
Oskar Sandberg ◽  
Nasim Zarrabi ◽  
Paul Meredith ◽  
Ardalan Armin
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells
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