Effect of disorder and vacancy defects on electrical transport properties of Co2MnGa thin films grown by magnetron sputtering

2021 ◽  
Vol 130 (22) ◽  
pp. 225301
Author(s):  
A. Miyashita ◽  
M. Maekawa ◽  
C. Suzuki ◽  
S. Yamamoto ◽  
A. Kawasuso ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Vacancy Defects ◽  
Effect Of Disorder

Transport properties of Bi2Se3 thin films grown by magnetron sputtering

2015 ◽  
Vol 08 (02) ◽  
pp. 1550020 ◽  
Author(s):  
Z. T. Wei ◽  
M. Zhang ◽  
Y. Yan ◽  
X. Kan ◽  
Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transport Properties ◽  
Electrical Transport ◽  
Annealing Treatment ◽  
Atomic Ratio ◽  
Weak Antilocalization ◽  
Electrical Transport Properties ◽  
Sputtering Deposition ◽  
Post Annealing

Epitaxial growth of Bi 2 Se 3 thin films is of great current interest due to the advantages in spintronics and thermoelectrical applications. In this paper, Bi 2 Se 3 thin films on Si (111) substrate have been prepared via magnetron sputtering deposition with post-annealing treatment and their microstructures and electrical transport properties were studied. Good quality with highly c-axis oriented films could be obtained after post-annealing treatment. The annealing temperature (T a ) obviously affected the phase structures and electrical properties. The crystallinity and the lattice parameters c of the Bi 2 Se 3 thin-films increased with increasing T a . The relative atomic ratio of Se / Bi decreased with increasing T a and large number of Se vacancies was discovered in films with T a = 350° C . The resistivity of films decreased monotonously and showed weakly metallic resistivity with the increase of T a . Non-saturated high-field linear magnetoresistance and weak antilocalization were found in films with higher T a .

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation

2021 ◽  
pp. 100113
Author(s):  
Jyoti Yadav ◽  
Rini Singh ◽  
M.D. Anoop ◽  
Nisha Yadav ◽  
N. Srinivasa Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Shi Irradiation

Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ08
Author(s):  
Akihiro Tsuruta ◽  
Yusuke Tsujioka ◽  
Yutaka Yoshida ◽  
Ichiro Terasaki ◽  
Norimitsu Murayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Oxide Thin Films ◽  
Electrical Transport Properties

Time‐Dependent Electrical Transport Properties of Topological Insulator Cr‐Doped Bi 2 Se 3 Thin Films

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Topological Insulator ◽  
Electrical Transport ◽  
Time Dependent ◽  
Electrical Transport Properties
Sign in / Sign up

Export Citation Format

Share Document