High-throughput deterministic plasma etching using array-type plasma generator system

2021 ◽  
Vol 92 (12) ◽  
pp. 125107
Author(s):  
Yasuhisa Sano ◽  
Ken Nishida ◽  
Ryohei Asada ◽  
Shinya Okayama ◽  
Daisetsu Toh ◽  
...  
Keyword(s):  
High Throughput ◽  
Plasma Etching ◽  
Plasma Generator ◽  
Generator System ◽  
Array Type

Numerically controlled sacrificial plasma oxidation using array-type electrode toward high-throughput deterministic machining

2011 ◽  
Vol 7 (3/4) ◽  
pp. 289
Author(s):  
Yasuhisa Sano ◽  
Keinosuke Yoshinaga ◽  
Shohei Kamisaka ◽  
Hidekazu Mimura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
High Throughput ◽  
Plasma Oxidation ◽  
Array Type

High-throughput anisotropic plasma etching of polyimide for MEMS

2011 ◽  
Vol 21 (6) ◽  
pp. 067003 ◽  
Author(s):  
Vladimir Bliznetsov ◽  
Anbumalar Manickam ◽  
Junwei Chen ◽  
Nagarajan Ranganathan
Keyword(s):  
High Throughput ◽  
Plasma Etching ◽  
Anisotropic Plasma

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

154: Integration of TPSA and High-Throughput Mass Spectrometry Data Improves Prostate Cancer Prediction

2007 ◽  
Vol 177 (4S) ◽  
pp. 52-53
Author(s):  
Stefano Ongarello ◽  
Eberhard Steiner ◽  
Regina Achleitner ◽  
Isabel Feuerstein ◽  
Birgit Stenzel ◽  
...  
Keyword(s):  
Prostate Cancer ◽  
Mass Spectrometry ◽  
High Throughput ◽  
Mass Spectrometry Data ◽  
Cancer Prediction
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