Monolithic low-temperature fabrication of amorphous indium oxide thin-film transistors utilizing a selective hydrogen doping technique

2021 ◽  
Vol 119 (26) ◽  
pp. 263501
Author(s):  
Hojun Seo ◽  
Sunjin Kim ◽  
Jeongsu Lee ◽  
Onejae Sul ◽  
Seung-Beck Lee
2019 ◽  
Vol 66 (3) ◽  
pp. 1302-1307 ◽  
Author(s):  
Xuyang Li ◽  
Jin Cheng ◽  
Yonghua Chen ◽  
Yunfei He ◽  
Yan Li ◽  
...  

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.


2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.


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