scholarly journals Quasi-harmonic theory for phonon thermal boundary conductance at high temperatures

2022 ◽  
Vol 131 (1) ◽  
pp. 015101
Author(s):  
Patrick E. Hopkins ◽  
John A. Tomko ◽  
Ashutosh Giri
Keyword(s):  
High Temperatures ◽  
Thermal Boundary Conductance

Influence of Inelastic Scattering at Metal-Dielectric Interfaces

2008 ◽  
Vol 130 (2) ◽  
Author(s):  
Patrick E. Hopkins ◽  
Pamela M. Norris ◽  
Robert J. Stevens
Keyword(s):  
Inelastic Scattering ◽  
High Temperatures ◽  
Experimental Testing ◽  
Phonon Transport ◽  
Dynamic Simulations ◽  
Interfacial Transport ◽  
Thermal Boundary Conductance ◽  
Dielectric Interfaces ◽  
Transport Channels

Thermal boundary conductance is becoming increasingly important in microelectronic device design and thermal management. Although there has been much success in predicting and modeling thermal boundary conductance at low temperatures, the current models applied at temperatures more common in device operation are not adequate due to our current limited understanding of phonon transport channels. In this study, the scattering processes across Cr∕Si, Al∕Al2O3, Pt∕Al2O3, and Pt∕AlN interfaces were examined by transient thermoreflectance testing at high temperatures. At high temperatures, traditional models predict the thermal boundary conductance to be relatively constant in these systems due to assumptions about phonon elastic scattering. Experiments, however, show an increase in the conductance indicating inelastic phonon processes. Previous molecular dynamic simulations of simple interfaces indicate the presence of inelastic scattering, which increases interfacial transport linearly with temperature. The trends predicted computationally are similar to those found during experimental testing, exposing the role of multiple-phonon processes in thermal boundary conductance at high temperatures.

Thermal boundary conductance across solid–solid interfaces at high temperatures: A microscopic approach

2021 ◽  
Vol 129 (19) ◽  
pp. 195102
Author(s):  
Jinxin Zhong ◽  
Qing Xi ◽  
Zhiguo Wang ◽  
Tsuneyoshi Nakayama ◽  
Xiaobo Li ◽  
...  
Keyword(s):  
High Temperatures ◽  
Microscopic Approach ◽  
Thermal Boundary Conductance

Effects of Inelastic Scattering on Thermal Boundary Conductance at Metal-Dielectric Interfaces

2007 ◽  
Author(s):  
Patrick E. Hopkins ◽  
Pamela M. Norris ◽  
Robert J. Stevens
Keyword(s):  
Experimental Data ◽  
Elastic Scattering ◽  
Inelastic Scattering ◽  
Debye Temperature ◽  
High Temperatures ◽  
Interfacial Transport ◽  
Thermal Boundary Conductance ◽  
Dielectric Interfaces ◽  
Scattering Events

The accuracy of predictions of thermal boundary conductance using traditional models such as the diffuse mismatch model (DMM) varies depending on the types of material comprising the interface. These traditional models assume that phonons are elastically scattered which drives the energy conductance across the interface. It has been shown that at relatively high temperatures (i.e., above the Debye temperature) inelastic scattering events can drive interfacial transport. In this case, the predictions from traditional models become highly inaccurate. In this paper, the effects of inelastic scattering on thermal boundary conductance at metal/dielectric interfaces are studied. Experimental transient thermoreflectance data showing inelastic trends are reviewed and compared to traditional models. Using the physical assumptions in the traditional models and the experimental data, the relative contributions of inelastic and elastic scattering on thermal boundary conductance is inferred.

In situ REM imaging of surface processes on ceramic bulk crystals from 300 to 1670 K in a conventional TEM

1991 ◽  
Vol 49 ◽  
pp. 660-661
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
High Temperatures ◽  
Image Resolution ◽  
Atomic Processes ◽  
Crystal Surfaces ◽  
Beam Radiation ◽  
Surface Areas ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Gas Reactions

Studying the behavior of surfaces at high temperatures is of great importance for understanding the properties of ceramics and associated surface-gas reactions. Atomic processes occurring on bulk crystal surfaces at high temperatures can be recorded by reflection electron microscopy (REM) in a conventional transmission electron microscope (TEM) with relatively high resolution, because REM is especially sensitive to atomic-height steps.Improved REM image resolution with a FEG: Cleaved surfaces of a-alumina (012) exhibit atomic flatness with steps of height about 5 Å, determined by reference to a screw (or near screw) dislocation with a presumed Burgers vector of b = (1/3)<012> (see Fig. 1). Steps of heights less than about 0.8 Å can be clearly resolved only with a field emission gun (FEG) (Fig. 2). The small steps are formed by the surface oscillating between the closely packed O and Al stacking layers. The bands of dark contrast (Fig. 2b) are the result of beam radiation damage to surface areas initially terminated with O ions.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

Sign in / Sign up

Export Citation Format

Share Document