Structure and crystallization of an amorphous film of variable thickness Bi2Te3 with a copper sublayer under the action of an electron beam in TEM

2021 ◽  
Author(s):  
V. Yu. Kolosov ◽  
A. A. Yushkov
Keyword(s):  
Electron Beam ◽  
Variable Thickness ◽  
Amorphous Film

Use of variable thickness bolus to control electron beam penetration in chest wall irradiation

1981 ◽  
Vol 7 (6) ◽  
pp. 835-842 ◽  
Author(s):  
John O. Archambeau ◽  
Bruce Forell ◽  
Robert Doria ◽  
David O. Findley ◽  
Roland Jurisch ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chest Wall ◽  
Variable Thickness

Electron beam induced crystallization of a Ge‐Au amorphous film

1996 ◽  
Vol 80 (11) ◽  
pp. 6170-6174 ◽  
Author(s):  
Long Ba ◽  
Yong Qin ◽  
Ziqin Wu
Keyword(s):  
Electron Beam ◽  
Amorphous Film ◽  
Induced Crystallization

Reversible electron‐beam writing on a submicron scale in a superionic amorphous film

1993 ◽  
Vol 63 (13) ◽  
pp. 1801-1803 ◽  
Author(s):  
J. M. Oldale ◽  
S. R. Elliott
Keyword(s):  
Electron Beam ◽  
Amorphous Film ◽  
Submicron Scale

Second-Harmonic Generation of the Chalcogenide Amorphous Film by Electron Beam Irradiation

2011 ◽  
Vol 415-417 ◽  
pp. 1376-1381
Author(s):  
Jun Hu ◽  
Shao Xuan Gu
Keyword(s):  
Electron Beam ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Electron Beam Irradiation ◽  
Second Harmonic ◽  
Irradiation Time ◽  
Amorphous Film ◽  
Incident Electron Energy ◽  
Electric Dipoles ◽  
Electric Field Generation

PLD(pulsed laser deposition) method was used to prepare amorphous GeS2-Ga2S3-CdS chalcogenide film. Obvious SHG(second harmonic generation) was observed in electron beam irradiated film by Maker fringe method. According to Raman spectra, we discussed the mechanism of SHG and ascribed the origination of SHG to the local electric field generation under electron beam and uneven charge distribution. With the increase of accelerating voltage and the extension of irradiation time, the SHG intensity increased and reached the maximum, which is due to the enhancement of breakage of glassy isotropy with gradually increased incident electron energy and the finite population of electric dipoles leading to the saturation of SH intensity.

A Process Model for Electron Beam Welding with Variable Thickness

2013 ◽  
Vol 762 ◽  
pp. 538-543
Author(s):  
Jiang Lin Huang ◽  
Jean Christophe Gebelin ◽  
Richard Turner ◽  
Roger C. Reed
Keyword(s):  
Electron Beam ◽  
Variable Thickness ◽  
Process Model ◽  
Electron Beam Welding ◽  
Welding Process ◽  
Beam Power ◽  
Welding Parameters ◽  
Eb Welding ◽  
Experimental Calibration ◽  
Beam Focusing

A process model for electron beam (EB) welding with a variable thickness weld joint has been developed. Based on theoretical aspects and experimental calibration of electron beam focusing, welding parameters including beam power, focus current, working distance and welding speed were formulated in the heat source model. The model has been applied for the simulation of assembly of components in a gas turbine engine compressor. A series of metallographic weld sections with different welding thickness were investigated to validate the predicted thermal results. The workpieces were scanned both prior to-and after welding, using automated optical metrology (GOM scanning) in order to measure the distortion induced in the welding process. The measured result was compared with predicted displacement. This work demonstrates the attempts to improve the EB welding process modelling by connecting the heat input directly from the actual welding parameters, which could potentially reduce (or even remove) the need for weld bead calibrations from experimental observation.

Level of residual stresses when electron beam welding joints of variable thickness

1992 ◽  
Vol 6 (9) ◽  
pp. 720-722
Author(s):  
A A Antonov ◽  
N N Evgrafov ◽  
V M Kozintsev ◽  
Yu T Lysenkov ◽  
E M Feoktisova
Keyword(s):  
Electron Beam ◽  
Residual Stresses ◽  
Variable Thickness ◽  
Electron Beam Welding ◽  
Welding Joints

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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