High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%
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2002 ◽
Vol 41
(Part 2, No. 12B)
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pp. L1431-L1433
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2017 ◽
Vol 5
(23)
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pp. 5749-5756
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