Enhancing spin-Hall spin–orbit torque efficiency by bulk spin scattering modulation in ferromagnets with ruthenium impurities

2021 ◽  
Vol 130 (19) ◽  
pp. 193901
Author(s):  
Guonan Feng ◽  
Xi Chen ◽  
Di Fu ◽  
Jintao Liu ◽  
Xinyan Yang ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Spin Scattering

scholarly journals Генерация спиновых токов в n-Si, легированном фосфором, сурьмой и висмутом и влияние на них процессов рассеяния спинов с переворотом

2021 ◽  
Vol 55 (8) ◽  
pp. 654
Author(s):  
А.А. Ежевский ◽  
Д.В. Гусейнов ◽  
А.В. Сухоруков ◽  
Е.А. Калинина ◽  
А.В. Новиков ◽  
...  
Keyword(s):  
Diffusion Model ◽  
Conduction Electron ◽  
Spin Diffusion ◽  
Electronic Conductivity ◽  
Silicon Layer ◽  
Spin Orbit ◽  
Spin Pumping ◽  
Spin Currents ◽  
Orbit Potential ◽  
Spin Scattering

Doping of silicon with bismuth leads to additional spin scattering of the conduction electron by the spin-orbit potential introduced by a heavy donor. In this paper, we discuss spin flip scattering influence on the generation of spin currents in silicon with electronic conductivity. Based on the theory of spin pumping and the diffusion model, the values of spin currents and voltages of the ISHE are calculated with varying the type of donor and its concentration and the spin diffusion lengths. Calculations made it possible to find the dependences of the magnitudes of the effects on the parameters of silicon layers doped with bismuth, and to explain the absence of ISHE signals when the silicon layer is doped only with phosphorus or antimony with a concentration of Nd> 1019 cm-3.

Spin-scattering at the interface of normal and spin–orbit interaction heterostructure

2015 ◽  
Vol 29 (08) ◽  
pp. 1550050 ◽  
Author(s):  
Yongmei Zhang ◽  
Zhijie Qin
Keyword(s):  
Incident Angle ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Dimensional Electron ◽  
Electron Wave ◽  
Spin Orbit Interaction ◽  
Rashba Spin ◽  
Spin Scattering ◽  
Dimensional Electron Gas ◽  
Spin Devices

Rashba spin–orbit interaction (RSOI) in two-dimensional electron gas is illustrated. When electron wave transmits through a semiconductor heterojunctions, spin flip and spin birefringence occur at the interface. According to the continuity conditions, we study how incident angle or the strength of spin–orbit interaction affects the scatter coefficients. Totally reflection of spin-up chirality is explained. This work will enlighten proposals of spin devices for spin filtration.

Spin scattering and spin-orbit coupling in metals

1979 ◽  
Vol 32 (11) ◽  
pp. 1021-1024 ◽  
Author(s):  
J.R. Sambles ◽  
J.E. Cousins
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Spin Scattering

Transient gain-versus-absorption laser probing of spin-orbit states, kinetics and dynamics

1987 ◽  
Vol 84 ◽  
pp. 385-391
Author(s):  
Smedley John E. ◽  
Hess Wayne P. ◽  
Haugen Harold K. ◽  
R. Leone Stephen
Keyword(s):  
Spin Orbit ◽  
Laser Probing ◽  
Kinetics And Dynamics
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