Study of the pulse height defect of 4H-SiC Schottky barrier detectors in heavy ion detection

2021 ◽  
Author(s):  
Bohumír Zaťko ◽  
Ladislav Hrubčín ◽  
Andrea Šagátová ◽  
Pavol Boháček ◽  
Oleg Michajlovič Ivanov ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Pulse Height ◽  
Heavy Ion ◽  
Ion Detection ◽  
Barrier Detectors

Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties

2018 ◽  
Vol 461 ◽  
pp. 276-280 ◽  
Author(s):  
B. Zaťko ◽  
L. Hrubčín ◽  
A. Šagátová ◽  
J. Osvald ◽  
P. Boháček ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Quality ◽  
Barrier Detectors

"Construction And Performance Of A 320 X 244-Element IR-CCD Imager With PtSi Schottky-Barrier Detectors

1989 ◽  
Author(s):  
T. S. Villani ◽  
W. F. Kosonocky ◽  
F. V. Shallcross ◽  
J. V. Groppe ◽  
G. M. Meray ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
And Performance ◽  
Barrier Detectors

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 575-578 ◽  
Author(s):  
Takahiro Makino ◽  
Manato Deki ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Heavy Ion ◽  
Charge Collection ◽  
Static Electric Field ◽  
The Impact ◽  
Lower Electric Field

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

Visible-blind GaN Schottky barrier detectors grown on Si(111)

1998 ◽  
Vol 72 (5) ◽  
pp. 551-553 ◽  
Author(s):  
A. Osinsky ◽  
S. Gangopadhyay ◽  
J. W. Yang ◽  
R. Gaska ◽  
D. Kuksenkov ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Detectors ◽  
Visible Blind
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