scholarly journals Determining the temperature-dependent London penetration depth in HTS thin films and its effect on SQUID performance

2021 ◽  
Vol 119 (14) ◽  
pp. 142601
Author(s):  
Shane Keenan ◽  
Colin Pegrum ◽  
Marc Gali Labarias ◽  
Emma E. Mitchell
2002 ◽  
Vol 73 (2) ◽  
pp. 335-344 ◽  
Author(s):  
A. G. Zaitsev ◽  
R. Schneider ◽  
G. Linker ◽  
F. Ratzel ◽  
R. Smithey ◽  
...  

1989 ◽  
Vol 162-164 ◽  
pp. 1537-1538 ◽  
Author(s):  
N. Klein ◽  
G. Müller ◽  
S. Orbach ◽  
H. Piel ◽  
H. Chaloupka ◽  
...  

1988 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
H. Schwenke ◽  
W. Berneike ◽  
J. Knoth ◽  
U. Weisbrod

AbstractThe total reflection of X-rays is mainly determined by three parameters , that is the orltical angle, the reflectivity and the penetration depth. For X-ray fluorescence analysis the respective characteristic features can be exploited in two rather different fields of application. In the analysis of trace elements in samples placed as thin films on optical flats, detection limits as low as 2 pg or 0.05 ppb, respectively, have been obtained. In addition, a penetration depth in the nanometer regime renders Total Reflection XRF an inherently sensitive method for the elemental analysis of surfaces. This paper outlines the main physical and constructional parameters for instrumental design and quantitation in both branches of TXRF.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.


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