Laser-induced transverse voltage effect in c-axis inclined CuCr0.98Mg0.02O2 thin films with dominant phonon thermal conductivity

2021 ◽  
Vol 130 (14) ◽  
pp. 143104
Author(s):  
Y. D. Hu ◽  
Y. Li ◽  
H. R. Wu ◽  
Y. Y. Tang ◽  
K. Fan ◽  
...  
Author(s):  
Dye-Zone A. Chen ◽  
Arvind Narayanaswamy ◽  
Gang Chen

We predict theoretically that the effective in-plane thermal conductivity of crystalline and amorphous thin films can be increased by surface phonon-polaritons significantly beyond their intrinsic bulk values. We show that the thermal conductivity due to surface phonon-polaritons increases with decreasing film thickness. In particular, for a 40 nm thick film of amorphous silicon dioxide, we calculate a total thermal conductivity of 4 W m−1 K−1 at 500 K, which is an increase of ~100% over the intrinsic phonon thermal conductivity.


Nano Letters ◽  
2015 ◽  
Vol 15 (3) ◽  
pp. 1791-1795 ◽  
Author(s):  
Jon F. Ihlefeld ◽  
Brian M. Foley ◽  
David A. Scrymgeour ◽  
Joseph R. Michael ◽  
Bonnie B. McKenzie ◽  
...  

2019 ◽  
Vol 677 ◽  
pp. 21-25 ◽  
Author(s):  
Yucheng He ◽  
Xiaoheng Li ◽  
Ling Ge ◽  
Qinyun Qian ◽  
Wenbing Hu

2020 ◽  
Vol 4 (5) ◽  
Author(s):  
Alexandros Sarantopoulos ◽  
Dipanjan Saha ◽  
Wee-Liat Ong ◽  
César Magén ◽  
Jonathan A. Malen ◽  
...  

2020 ◽  
Vol 6 (4) ◽  
pp. 723-728
Author(s):  
Jingyu Li ◽  
Peng-Fei Liu ◽  
Chi Zhang ◽  
Xiaobo Shi ◽  
Shujuan Jiang ◽  
...  

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


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