scholarly journals Structural and transport properties of Y1-x(Dy)xPdBi (0 ≤ x ≤ 1) topological semi-metallic thin films

2021 ◽  
Vol 119 (12) ◽  
pp. 122402
Author(s):  
Vishal Bhardwaj ◽  
Niladri Banerjee ◽  
Ratnamala Chatterjee
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Metallic Thin Films

Thermal Transport Properties of Various Thin Films for MEMS Applications

2006 ◽  
Vol 326-328 ◽  
pp. 293-296
Author(s):  
Sun Rock Choi ◽  
Dong Sik Kim ◽  
Sung Hoon Choa
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Transport Properties ◽  
Thermal Transport ◽  
Metallic Thin Films ◽  
Micro Electro Mechanical Systems ◽  
Thermal Transport Properties ◽  
Atomic Force Microscope Measurement ◽  
Evaporation Technique ◽  
Thermal Diffusivities

The thermal properties of thin films, such as thermal conductivity and diffusivity, are important in design and analysis of MEMS (micro electro mechanical systems), particularly in microscale thermal systems and high-power electronic/optoelectronic devices. In the present study, the thermal conductivity and diffusivity of a variety of thin film materials, which are commonly used in MEMS applications, are measured. The samples include Au, Sn, Mo, Al/Ti alloy, AlN, and SiC. The Au sample is deposited by the e-beam evaporation technique while the rest of the metallic samples are deposited by sputtering processes. The AlN and SiC films are also prepared by sputtering processes. In the experiment, the thermal diffusivities of metallic thin films are measured by two independent methods — the AC calorimetric method and photothermal mirage technique. The thermal conductivities of dielectric thin films are measured by the 3 omega technique. The results show that the thermal transport properties of some of the films are significantly smaller than those of the same material in bulk form. Especially, the AlN and SiC thin films exhibit pronounced thermal conductivity reduction because of the size effect. The electrical conductivities of the metallic thin films are measured as well. The results for Au and Sn are consistent with the thermal conductivity, confirming the Wiedmann-Franz law. However, Al/Ti and Mo thin films show considerable deviation from the law. The results are analyzed based on the XRD (X-Ray diffraction) and AFM (Atomic Force Microscope) measurement.

Rocking Beam Microarea Diffraction Applied to Metallic thin Films

1976 ◽  
Vol 34 ◽  
pp. 396-397
Author(s):  
R. H. Geiss
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Small Area ◽  
Objective Lens ◽  
Electron Optics ◽  
Metallic Thin Films ◽  
Transmission Electron Diffraction ◽  
Transmission Electron ◽  
Sample Height ◽  
Scanning Transmission

The theory and practical limitations of micro area scanning transmission electron diffraction (MASTED) will be presented. It has been demonstrated that MASTED patterns of metallic thin films from areas as small as 30 Åin diameter may be obtained with the standard STEM unit available for the Philips 301 TEM. The key to the successful application of MASTED to very small area diffraction is the proper use of the electron optics of the STEM unit. First the objective lens current must be adjusted such that the image of the C2 aperture is quasi-stationary under the action of the rocking beam (obtained with 40-80-160 SEM settings of the P301). Second, the sample must be elevated to coincide with the C2 aperture image and its image also be quasi-stationary. This sample height adjustment must be entirely mechanical after the objective lens current has been fixed in the first step.

scholarly journals Stoichiometry control and electronic and transport properties of pyrochlore Bi2Ir2O7 thin films

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Stoichiometry Control

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Phase sequence in the solid state amorphization reaction of metallic thin films

1989 ◽  
Vol 174 ◽  
pp. 11-24 ◽  
Author(s):  
S. Schneider ◽  
H. Schröder ◽  
K. Samwer ◽  
B. Schuhmacher ◽  
U. Köster
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Metallic Thin Films ◽  
Phase Sequence ◽  
State Amorphization

Analysis of damage formation and propagation in metallic thin films under the action of thermal stresses and electric fields

1996 ◽  
Vol 2 (3) ◽  
pp. 231-258 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Matthew N. Enmark ◽  
Cora M. Leibig ◽  
Sokrates T. Pantelides
Keyword(s):  
Thin Films ◽  
Electric Fields ◽  
Thermal Stresses ◽  
Metallic Thin Films
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