scholarly journals Lateral electrical transport and field-effect characteristics of sputtered p-type chalcogenide thin films

2021 ◽  
Vol 119 (23) ◽  
pp. 232106
Author(s):  
Sumaiya Wahid ◽  
Alwin Daus ◽  
Asir Intisar Khan ◽  
Victoria Chen ◽  
Kathryn M. Neilson ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Field Effect ◽  
Chalcogenide Thin Films ◽  
P Type

Electrical transport properties of Indium chalcogenide thin films and their thermoelectric applications

2020 ◽  
Author(s):  
Pandian Mannu ◽  
Matheswaran Palanisamy ◽  
Gokul Bangaru ◽  
Sathyamoorthy Ramakrishnan ◽  
Meena Ramcharan ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Chalcogenide Thin Films

Electrical transport properties of Ag-doped p-type PbTe epitaxial thin films

1981 ◽  
Vol 68 (1) ◽  
pp. 227-232 ◽  
Author(s):  
A. L. Dawar ◽  
S. K. Paradkar ◽  
P. Kumar ◽  
O. P. Taneja ◽  
P. C. Mathur
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Epitaxial Thin Films ◽  
Electrical Transport Properties ◽  
P Type

Field Effect Studies on MIS Structures of p-Type Hg0.8Cd0.2Te Thin Films

1984 ◽  
Author(s):  
A. L. Dawar ◽  
K. V. Ferdinand ◽  
C. Jagadish ◽  
Anil Kumar ◽  
P. C. Mathur
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
P Type ◽  
Mis Structures

scholarly journals Evaporated tellurium thin films for p-type field-effect transistors and circuits

2019 ◽  
Vol 15 (1) ◽  
pp. 53-58 ◽  
Author(s):  
Chunsong Zhao ◽  
Chaoliang Tan ◽  
Der-Hsien Lien ◽  
Xiaohui Song ◽  
Matin Amani ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
P Type

scholarly journals Сегнетоэлектрические свойства гетероструктуры Sr-=SUB=-0.5-=/SUB=-Ba-=SUB=-0.5-=/SUB=-Nb-=SUB=-2-=/SUB=-O-=SUB=-6-=/SUB=-/Ba-=SUB=-0.2-=/SUB=-Sr-=SUB=-0.8-=/SUB=-TiO-=SUB=-3-=/SUB=-/Si(001)

2022 ◽  
Vol 48 (5) ◽  
pp. 15
Author(s):  
Д.А. Киселев ◽  
А.В. Павленко ◽  
С.П. Зинченко
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Scanning Probe Microscopy ◽  
Field Effect ◽  
Average Crystallite Size ◽  
Scanning Probe ◽  
Si Substrate ◽  
Initial State ◽  
P Type ◽  
Potential Signal

The properties of c-oriented thin films Sr0.5Ba0.5Nb2O6 grown on a Si(001) (p-type) substrate with a pre-deposited Ba0.2Sr0.8TiO3 layer were studied using scanning probe microscopy and dielectric spectroscopy. It is established that the films Sr0.5Ba0.5Nb2O6 are characterized by low surface roughness (less than 6 nm), average crystallite size 93 nm. It is shown that there is spontaneous polarization in the film directed from its surface to the substrate, which caused the manifestation of the field effect for the case of the Si substrate with p-type conductivity without external field effect. Differences in the magnitude of the surface potential signal for regions polarized by an external electric field of different polarities (+10 and −10 V), as well as in their relaxation to the initial state, are revealed. The reasons for the established patterns are discussed.

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