The optimized interface characteristics of β-Ga2O3 Schottky barrier diode with low temperature annealing

2021 ◽  
Vol 119 (13) ◽  
pp. 132103
Author(s):  
Yue-Hua Hong ◽  
Xue-Feng Zheng ◽  
Yun-Long He ◽  
Fang Zhang ◽  
Xiang-Yu Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Low Temperature Annealing ◽  
Interface Characteristics

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height

2021 ◽  
Author(s):  
Takuma Doi ◽  
Shigehisa Shibayama ◽  
Mitsuo Sakashita ◽  
Kazutoshi Kojima ◽  
Mitsuaki Shimizu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Force Microscopy ◽  
Flat Interface ◽  
Low Temperature Annealing ◽  
Atomic Force ◽  
Low Temperature Process

Abstract To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC interface to low-temperature annealing. Our results revealed that annealing at 200 °C reduced SBH; a low SBH of 0.28 eV was obtained on the lightly doped substrate. Atomic force microscopy measurements revealed negligible increase in the surface roughness after Mg deposition and annealing. Using the low-temperature process, a contact resistivity of 6.5 × 10−5 Ω⋅cm2 was obtained on the heavily doped substrate, which is comparable to Ni/4H-SiC subjected to annealing of above 950 °C.

Low Temperature Modeling of Ni/β-Ga2O3 Schottky Barrier Diode Interface

2021 ◽  
Author(s):  
Madani Labed ◽  
Jun Hui Park ◽  
Afak Meftah ◽  
Nouredine Sengouga ◽  
Jung Yeop Hong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Temperature Modeling

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

Wideband Modeling of CMOS Schottky Barrier Diode Detectors for THz Radiometry

2021 ◽  
pp. 1-1
Author(s):  
Sven Vanberkel ◽  
Satoshi Malotaux ◽  
Carmine De Martino ◽  
Marco Spirito ◽  
Danielle Cavallo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode
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