Multi-beam energy moments of measured compound ion velocity distributions

2021 ◽  
Vol 28 (10) ◽  
pp. 102305
Author(s):  
M. V. Goldman ◽  
D. L. Newman ◽  
J. P. Eastwood ◽  
G. Lapenta ◽  
J. L. Burch ◽  
...  
Keyword(s):  
Beam Energy ◽  
Ion Velocity ◽  
Energy Moments

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

ELECTRON BEAM ENERGY BRANCHING IN OXYGEN

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-777-C7-778
Author(s):  
G. Fournier ◽  
J. Bonnet ◽  
J. Bridet ◽  
J. Fort ◽  
D. Pigache
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Electron Beam Energy

scholarly journals EDS Quantification Using Fe L Peaks and Low Beam Energy

2021 ◽  
Vol 27 (S1) ◽  
pp. 1670-1672
Author(s):  
Jens Rafaelsen ◽  
Frank Eggert ◽  
Masanobu Kawabata
Keyword(s):  
Beam Energy

scholarly journals The Forward-Plane Star in $$^1$$H(d, pp)n Breakup at E$$_{{{\varvec{d}}}}=\mathbf{80}$$ MeV/nucleon

2021 ◽  
Vol 62 (4) ◽  
Author(s):  
A. Wilczek ◽  
A. Szadziński ◽  
N. Kalantar-Nayestanaki ◽  
St. Kistryn ◽  
A. Kozela ◽  
...  
Keyword(s):  
Cross Section ◽  
Beam Energy ◽  
Detector System ◽  
Systematic Analysis ◽  
Star Configurations

AbstractAnalysis of the data acquired with the BINA detector system in $$^1$$ 1 H(d, pp)n reaction at the beam energy of 80 MeV/nucleon makes a systematic analysis of the star configurations possible. This paper shows the preliminary cross section of the Forward-Plane Star (FPS) configuration with the neighbouring configurations.

Photodissociation dynamics of AlO at 193 nm using time-sliced ion velocity imaging

2020 ◽  
Vol 33 (5) ◽  
pp. 649-652
Author(s):  
Fang-fang Li ◽  
Yu-jie Ma ◽  
Jia-xing Liu ◽  
Guan-jun Wang ◽  
Feng-yan Wang
Keyword(s):  
Velocity Imaging ◽  
Ion Velocity ◽  
193 Nm

scholarly journals Beam energy determination via collinear laser spectroscopy

2021 ◽  
Vol 103 (3) ◽  
Author(s):  
Kristian König ◽  
Kei Minamisono ◽  
Jeremy Lantis ◽  
Skyy Pineda ◽  
Robert Powel
Keyword(s):  
Laser Spectroscopy ◽  
Beam Energy ◽  
Collinear Laser Spectroscopy ◽  
Energy Determination
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