scholarly journals Thickness-dependent Raman active modes of SnS thin films

AIP Advances ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 095106
Author(s):  
Itsuki Yonemori ◽  
Sudipta Dutta ◽  
Kosuke Nagashio ◽  
Katsunori Wakabayashi
Keyword(s):  
Thin Films ◽  
Sns Thin Films

The Effect of TSC and Nickel Doping on SnS Thin Films

Silicon ◽  
2020 ◽  
Author(s):  
Imen Ammar ◽  
Abdelaziz Gassoumi ◽  
Najoua Turki-Kamoun
Keyword(s):  
Thin Films ◽  
Nickel Doping ◽  
Sns Thin Films

Electrochemical deposition and characterization of SnS thin films

2010 ◽  
Vol 15 (4) ◽  
pp. 683-688 ◽  
Author(s):  
Medhat M. Kamel ◽  
Mervat Mohamed Ibrahim
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Sns Thin Films

scholarly journals Atmospheric Air Plasma Treated SnS Films: An Efficient Electrocatalyst for HER

Catalysts ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 462 ◽  
Author(s):  
Po-Chia Huang ◽  
Sanjaya Brahma ◽  
Po-Yen Liu ◽  
Jow-Lay Huang ◽  
Sheng-Chang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrogen Adsorption ◽  
High Plasma ◽  
Air Plasma ◽  
Atmospheric Air ◽  
Onset Potential ◽  
Active Edge ◽  
Sns Thin Films ◽  
P Type ◽  
Adsorption Desorption

Here, we demonstrate the enhanced water-splitting performance (I = 10 mA/cm2, Tafel slope = 60 mV/dec, onset potential = −80 mV) of atmospheric air plasma treated (AAPT) SnS thin films by the hydrogen evolution reaction (HER). The as prepared SnS films were subjected to Atmospheric Air Plasma Treatment (AAPT) which leads to formation of additional phases of Sn and SnO2 at plasma powers of 150 W and 250 W, respectively. The AAPT treatment at 150 W leads to the evaporation of the S atoms as SO2 generates a number of S-vacancies and Sn active edge sites over the surface of the SnS thin film. S-vacancies also create Sn active edge sites, surface p-type pinning that tunes the suitable band positions, and a hydrophilic surface which is beneficial for hydrogen adsorption/desorption. At high plasma power (250 W), the surface of the SnS films becomes oxidized and degrades the HER performance. These results demonstrate that AAPT (150 W) is capable of improving the HER performance of SnS thin films and our results indicate that SnS thin films can work as efficient electrocatalysts for HER.

scholarly journals Thickness Dependent Optical Properties of Thermally Evaporated SnS Thin Films

2012 ◽  
Vol 25 ◽  
pp. 150-157 ◽  
Author(s):  
P.A. Nwofe ◽  
K.T. Ramakrishna Reddy ◽  
J.K. Tan ◽  
I. Forbes ◽  
R.W. Miles
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sns Thin Films

A novel two-step strategy to fabricate phase-pure SnS photoelectrode with tunable conductivity: formation mechanism and photoelectrochemical properties

2021 ◽  
Author(s):  
Wenwan Zhang ◽  
Yufei Cheng ◽  
Junfeng Zhao ◽  
Qiujie Li ◽  
Jiawei Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Formation Mechanism ◽  
Photocurrent Density ◽  
Photoelectrochemical Properties ◽  
Secondary Phases ◽  
Injection Efficiency ◽  
Conductivity Type ◽  
Phase Pure ◽  
Sns Thin Films ◽  
Foil Substrate

Abstract Tin monosulfide (SnS), as a narrow band gap semiconductor for visible-light harvesting, nevertheless the easy formation of secondary phases such as Sn2S3 and SnS2 severely restricts its photoelectrochemical properties. Herein, we proposed a novel two-step strategy to fabricate phase-pure SnS photoelectrode with tunable conductivity on Ti foil substrate and carefully investigated the formation mechanism and photoelectrochemical properties. The tunable conductivity is determined by Na2SO4 pretreatment before annealing, which is supported by the EDS, XPS, and EPR characterizations. Na+ adsorbed to the edge of the precursor SnS2 nanosheets forming a dangling bond adsorption will protect S2- against reacting with the trace oxygen in the CVD system within a certain temperature range (< 525 ℃), thereby reducing the generation of S vacancies to adjust the S/Sn ratio and further regulating the conductivity type. Moreover, the anodic photocurrent density of SnS thin films was about 0.32 mA/cm2 at 1.23 V vs. RHE with the separation and injection efficiency of 1.22 % and 72.78 % and a maximum cathodic photocurrent density can reach approximately -0.36 mA/cm2 at 0 V vs. RHE with the separation and injection efficiency 1.15 % and 5.44 % respectively. The method shown in this work provides an effective approach to control the electrical conductivity of SnS thin films with considerable photocurrent response for phase-pure SnS.

Influence of Rapid Thermal Annealing on The Structural and Optical Properties of Pulsed Laser Deposited SnS Thin Films

2015 ◽  
Vol 36 (7) ◽  
pp. 811-820
Author(s):  
刘 磊 LIU Lei ◽  
马明杰 MA Ming-jie ◽  
刘丹丹 LIU Dan-dan ◽  
郭慧尔 GUO Hui-er ◽  
史成武 SHI Cheng-wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Structural And Optical Properties ◽  
Sns Thin Films

Low-cost and nontoxic highly rectifying diodes using p-type tin monosulfide (SnS) thin films and Ti/Au binary contacts

2019 ◽  
Vol 100 ◽  
pp. 192-199
Author(s):  
Koteeswara Reddy Nandanapalli ◽  
Devika Mudusu ◽  
Gunasekhar K. Reddy
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Sns Thin Films ◽  
P Type
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