scholarly journals Adiabatic topological pumping in a semiconductor nanowire

2021 ◽  
Vol 130 (17) ◽  
pp. 174301
Author(s):  
Zhi-Hai Liu ◽  
H. Q. Xu
Keyword(s):  
Semiconductor Nanowire

Transport in semiconductor nanowire superlattices described by coupled quantum mechanical and kinetic models

2013 ◽  
Vol 25 (33) ◽  
pp. 335301
Author(s):  
M Alvaro ◽  
L L Bonilla ◽  
M Carretero ◽  
R V N Melnik ◽  
S Prabhakar
Keyword(s):  
Kinetic Models ◽  
Quantum Mechanical ◽  
Semiconductor Nanowire

Highly oriented and ordered semiconductor nanowire arrays for photonic device applications

2005 ◽  
Author(s):  
Z. H. Wu ◽  
J. Gierak ◽  
E. Bourhis ◽  
A.-L. Biance ◽  
H. E. Ruda
Keyword(s):  
Nanowire Arrays ◽  
Semiconductor Nanowire ◽  
Photonic Device ◽  
Device Applications

Investigated Effect of Points Charge of the Receptors on the Conduction of Semiconductor Nanowire

2015 ◽  
Vol 1109 ◽  
pp. 167-170
Author(s):  
M. Wesam Al-Mufti ◽  
U. Hashim ◽  
Mijanur Rahman ◽  
Tijjani Adam ◽  
A.H. Azman ◽  
...  
Keyword(s):  
Finite Element ◽  
Oxide Layer ◽  
Point Charge ◽  
Potential Distribution ◽  
Silicon Nanowire ◽  
Comsol Multiphysics ◽  
Functional Layer ◽  
Semiconductor Nanowire ◽  
Finite Element Calculations

The paper reported a study on an effect of the point charge of the bio-interface of a nanowire field biosensor on the conductance of the nanowire, through finite element calculations using COMSOL Multiphysics. A model with 5 layers starting with silicon nanowire of radius 10nm surrounded by a 2-nm oxide layer, and the oxide layer were surrounded by a 5 nm thick functional layer and 2 points charge were considered for this study and last layer is for electrolyte. The results shows that is different voltages with points change is that effected on the conductance of nanowire that is clear from different of potential distribution of point charge.

Fault-Tolerant Nanoscale Processors on Semiconductor Nanowire Grids

2007 ◽  
Vol 54 (11) ◽  
pp. 2422-2437 ◽  
Author(s):  
Csaba Andras Moritz ◽  
Teng Wang ◽  
Pritish Narayanan ◽  
Michael Leuchtenburg ◽  
Yao Guo ◽  
...  
Keyword(s):  
Fault Tolerant ◽  
Semiconductor Nanowire

scholarly journals Universality in electron–modulated-acoustic-phonon interactions in a free-standing semiconductor nanowire

2010 ◽  
Vol 51 (7-8) ◽  
pp. 880-887 ◽  
Author(s):  
Junichi Hattori ◽  
Shigeyasu Uno ◽  
Nobuya Mori ◽  
Kazuo Nakazato
Keyword(s):  
Acoustic Phonon ◽  
Free Standing ◽  
Semiconductor Nanowire

scholarly journals Direct observation and manipulation of hot electrons at room temperature

2020 ◽  
Author(s):  
Hailu Wang ◽  
Fang Wang ◽  
Hui Xia ◽  
Peng Wang ◽  
Tianxin Li ◽  
...  
Keyword(s):  
Direct Observation ◽  
Real Space ◽  
Hot Electrons ◽  
Hot Electron ◽  
Performance Limit ◽  
Solar Cell Efficiency ◽  
Semiconductor Nanowire ◽  
Cell Efficiency ◽  
Intervalley Scattering ◽  
Occupied State

Abstract In modern electronics and optoelectronics, hot electron behaviors are highly concerned since they determine the performance limit of a device or system, like the associated thermal or power constraint of chips, the Shockley-Queisser limit for solar cell efficiency. Up-to-date, however, the manipulation of hot electrons is mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility, and even its path. Such a process is accomplished through the scanning-photocurrent-microscopy (SPCM) measurements by activating the intervalley-scattering events and one-dimensional charge-neutrality rule. Findings discovered here may provide a new degree of freedom in manipulating nonequilibrium electrons for both electronic and optoelectronic applications.

scholarly journals All Inorganic Semiconductor Nanowire Mesh for Direct Solar Water Splitting

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11739-11744 ◽  
Author(s):  
Bin Liu ◽  
Cheng-Hao Wu ◽  
Jianwei Miao ◽  
Peidong Yang
Keyword(s):  
Water Splitting ◽  
Semiconductor Nanowire ◽  
Solar Water ◽  
Solar Water Splitting ◽  
Inorganic Semiconductor
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