Barrier height study of two-well resonant-phonon terahertz quantum cascade lasers. I. The third-order tunneling current theory

2021 ◽  
Vol 130 (18) ◽  
pp. 183103
Author(s):  
Teppei Miyoshi ◽  
Dayan Ban
2010 ◽  
Vol 97 (11) ◽  
pp. 111113 ◽  
Author(s):  
J. P. Commin ◽  
K. Kennedy ◽  
D. G. Revin ◽  
S. Y. Zhang ◽  
A. B. Krysa ◽  
...  

Author(s):  
J.C. Zhang ◽  
F.Q. Liu ◽  
L.J. Wang ◽  
L.H. Zhao ◽  
W.F. Liu ◽  
...  

ACS Photonics ◽  
2018 ◽  
Vol 5 (11) ◽  
pp. 4687-4693 ◽  
Author(s):  
Martin Alexander Kainz ◽  
Sebastian Schönhuber ◽  
Aaron Maxwell Andrews ◽  
Hermann Detz ◽  
Benedikt Limbacher ◽  
...  

2016 ◽  
Vol 6 (6) ◽  
pp. 851-857 ◽  
Author(s):  
Behnam Mirzaei ◽  
Darren Hayton ◽  
David Thoen ◽  
Jian-Rong Gao ◽  
Tsung-Yu Kao ◽  
...  

2017 ◽  
Vol 66 (9) ◽  
pp. 099501
Author(s):  
Zhu Yong-Hao ◽  
Li Hua ◽  
Wan Wen-Jian ◽  
Zhou Tao ◽  
Cao Jun-Cheng

2011 ◽  
Vol 20 (03) ◽  
pp. 621-627
Author(s):  
TARIQ MANZUR ◽  
MEHDI ANWAR

GaN -based pseudomorphic heterostructures with their demonstrated superior thermal performance suggest an alternative to the standard GaAs -based technology to realize high power lasing at THz frequencies. A larger electron effective mass in GaN based system results in the energy levels lying deeper within the quantum well compared to its GaAs counterpart resulting in longer carrier lifetimes assisting transitions required for THz radiation while reducing tunneling current. However, the presence of spontaneous and piezoelectric polarization and dependence of bandgap and band offsets on structural and bias induced strain reduces carrier lifetime.


2000 ◽  
Vol 76 (7) ◽  
pp. 801-803 ◽  
Author(s):  
L. R. Wilson ◽  
P. T. Keightley ◽  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
J. C. Clark ◽  
...  

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